-
2
-
-
14644397685
-
First principles modelling of the deposition process for high-k dielectric films
-
74
-
S. D. Elliott: First principles modelling of the deposition process for high-k dielectric films, Electrochem. Soc. Proc. 2003-14, 231 (2003) 74
-
(2003)
Electrochem. Soc. Proc.
, vol.2003
, Issue.14
, pp. 231
-
-
Elliott, S.D.1
-
3
-
-
0030762050
-
The chemical vapor deposition of aluminium nitride: Unusual cluster formation in the gas phase
-
74, 77
-
A. Y. Timoshkin, H. F. Bettinger, H. F. Schaefer, III: The chemical vapor deposition of aluminium nitride: unusual cluster formation in the gas phase, J. Am. Chem. Soc. 119, 5668-5678 (1997) 74, 77
-
(1997)
J. Am. Chem. Soc.
, vol.119
, pp. 5668-5678
-
-
Timoshkin, A.Y.1
Bettinger, H.F.2
Schaefer III, H.F.3
-
4
-
-
0035810503
-
DFT modeling of chemical vapor deposition of GaN from organogallium precursors. 1. Thermodynamics of elimination reactions
-
74, 77
-
A. Y. Timoshkin, H. F. Bettinger, H. F. Schaefer, III: DFT modeling of chemical vapor deposition of GaN from organogallium precursors. 1. Thermodynamics of elimination reactions, J. Phys. Chem. A 105, 3240-3248 (2001) 74, 77
-
(2001)
J. Phys. Chem. A
, vol.105
, pp. 3240-3248
-
-
Timoshkin, A.Y.1
Bettinger, H.F.2
Schaefer III, H.F.3
-
5
-
-
9144222240
-
Simulating the atomic layer deposition of alumina from first principles
-
74, 75, 78
-
S. D. Elliott, J. C. Greer: Simulating the atomic layer deposition of alumina from first principles, J. Mater. Chem. 14, 3246-3250 (2004) 74, 75, 78
-
(2004)
J. Mater. Chem.
, vol.14
, pp. 3246-3250
-
-
Elliott, S.D.1
Greer, J.C.2
-
6
-
-
2442713946
-
2O as precursors
-
74, 78, 79
-
2O as precursors, J. Phys. Chem. B 108, 5718-5725 (2004) 74, 78, 79
-
(2004)
J. Phys. Chem. B
, vol.108
, pp. 5718-5725
-
-
Heyman, A.1
Musgrave, C.B.2
-
7
-
-
14644442382
-
A methodology for the kinetic Monte Carlo simulation of alumina atomic layer deposition onto silicon
-
75, 79
-
G. Mazaleyrat, A. Estève, L. Jeloaica, M. Djafari-Rouhani: A methodology for the kinetic Monte Carlo simulation of alumina atomic layer deposition onto silicon, Comp. Mater. Sci. 33, 74-82 (2005) 75, 79
-
(2005)
Comp. Mater. Sci.
, vol.33
, pp. 74-82
-
-
Mazaleyrat, G.1
Estève, A.2
Jeloaica, L.3
Djafari-Rouhani, M.4
-
8
-
-
0347604215
-
Mechanism and kinetics of thin zirconium and hafnium oxide film growth in an ALD reactor
-
75, 82, 83
-
M. Deminsky, A. Knizhnik, I. Belov, S. Umanskii, E. Rykova, A. Bagatur'yants, B. Potapkin, M. Stoker, A. Korkin: Mechanism and kinetics of thin zirconium and hafnium oxide film growth in an ALD reactor, Surf. Sci. 549, 67-86 (2004) 75, 82, 83
-
(2004)
Surf. Sci.
, vol.549
, pp. 67-86
-
-
Deminsky, M.1
Knizhnik, A.2
Belov, I.3
Umanskii, S.4
Rykova, E.5
Bagatur'yants, A.6
Potapkin, B.7
Stoker, M.8
Korkin, A.9
-
9
-
-
79956014640
-
Quantum chemical study of the mechanism of aluminium oxide atomic layer deposition
-
75
-
Y. Widjaja, C. B. Musgrave: Quantum chemical study of the mechanism of aluminium oxide atomic layer deposition, Appl. Phys. Lett. 80, 3304-3306 (2002) 75
-
(2002)
Appl. Phys. Lett.
, vol.80
, pp. 3304-3306
-
-
Widjaja, Y.1
Musgrave, C.B.2
-
11
-
-
4043099571
-
3
-
76
-
3, Appl. Phys. Lett. 85, 630-632 (2004) 76
-
(2004)
Appl. Phys. Lett.
, vol.85
, pp. 630-632
-
-
Scarel, G.1
Bonera, E.2
Wiemer, C.3
Tallarida, G.4
Spiga, S.5
Fanciulli, M.6
Fedushkin, I.L.7
Schumann, H.8
Lebedinskii, Y.9
Zenkevich, A.10
-
12
-
-
31744452091
-
Precursor combinations for ALD of rare earth oxides and silicates - A, quantum chemical and X-ray study
-
76
-
S. D. Elliott, G. Scarel, C. Wiemer, M. Fanciulli, T. Lebediriskii, A. Zenkevich, I. L. Fedushkin: Precursor combinations for ALD of rare earth oxides and silicates - a, quantum chemical and X-ray study, in (Proc. Electrochem. Soc. 2005) 76
-
(2005)
Proc. Electrochem. Soc.
-
-
Elliott, S.D.1
Scarel, G.2
Wiemer, C.3
Fanciulli, M.4
Lebediriskii, T.5
Zenkevich, A.6
Fedushkin, I.L.7
-
13
-
-
0342551099
-
Quantum modeling of the CVD of transition metal materials
-
77
-
T. R. Cundari, S. O. Sommerer: Quantum modeling of the CVD of transition metal materials, Chem. Vap. Dep. 3, 183-192 (1997) 77
-
(1997)
Chem. Vap. Dep.
, vol.3
, pp. 183-192
-
-
Cundari, T.R.1
Sommerer, S.O.2
-
14
-
-
2442460552
-
Growth per cycle in atomic layer deposition: Real application examples of a theoretical model
-
77, 80, 82
-
R. L. Puurunen: Growth per cycle in atomic layer deposition: real application examples of a theoretical model, Chem. Vap. Depos. 9, 327-332 (2003) 77, 80, 82
-
(2003)
Chem. Vap. Depos.
, vol.9
, pp. 327-332
-
-
Puurunen, R.L.1
-
15
-
-
21744444606
-
Surface chemistry of atomic layer deposition: A, case study for the trimethylaluminium/water process
-
78
-
R. L. Puurunen: Surface chemistry of atomic layer deposition: a, case study for the trimethylaluminium/water process, J. Appl. Phys. 97, 121301 (2005) 78
-
(2005)
J. Appl. Phys.
, vol.97
, pp. 121301
-
-
Puurunen, R.L.1
-
19
-
-
0141857374
-
2 gate dielectric layers
-
79
-
2 gate dielectric layers, J. Appl. Phys. 94, 3403-3413 (2003) 79
-
(2003)
J. Appl. Phys.
, vol.94
, pp. 3403-3413
-
-
Alam, M.L.G.M.A.1
-
20
-
-
9744227161
-
Island growth in the atomic layer deposition of zirconium oxide and aluminium oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy
-
79
-
R. L. Puurunen, et al.: Island growth in the atomic layer deposition of zirconium oxide and aluminium oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy, J. Appl. Phys. 96, 4878-4889 (2004) 79
-
(2004)
J. Appl. Phys.
, vol.96
, pp. 4878-4889
-
-
Puurunen, R.L.1
-
22
-
-
0030167492
-
Monolayer thickness in atomic layer deposition
-
80
-
M. Yliliammi: Monolayer thickness in atomic layer deposition, Thin Solid Films 279, 124-130 (1996) 80
-
(1996)
Thin Solid Films
, vol.279
, pp. 124-130
-
-
Yliliammi, M.1
-
23
-
-
0346291270
-
Growth per cycle in atomic layer deposition: A theoretical model
-
80
-
R. L. Puurunen: Growth per cycle in atomic layer deposition: a theoretical model, Chem. Vap. Depos. 9, 249-257 (2003) 80
-
(2003)
Chem. Vap. Depos.
, vol.9
, pp. 249-257
-
-
Puurunen, R.L.1
-
24
-
-
14644420953
-
Predictive process design: A theoretical model of atomic layer deposition
-
80, 81
-
S. D. Elliott: Predictive process design: A theoretical model of atomic layer deposition, Comp. Mater. Sci. 33, 20-25 (2005) 80, 81
-
(2005)
Comp. Mater. Sci.
, vol.33
, pp. 20-25
-
-
Elliott, S.D.1
-
25
-
-
0035900121
-
In situ quartz crystal microbalance and quadrupole mass spectrometry studies of ALD of aluminium oxide from TMA and water
-
80
-
A. Rahtu, T. Alaranta, M. Ritala: In situ quartz crystal microbalance and quadrupole mass spectrometry studies of ALD of aluminium oxide from TMA and water, Langmuir 17, 6506-6509 (2001) 80
-
(2001)
Langmuir
, vol.17
, pp. 6506-6509
-
-
Rahtu, A.1
Alaranta, T.2
Ritala, M.3
-
26
-
-
0033700652
-
Theoretical evaluation of film growth rate during atomic layer epitaxy
-
80
-
H.-S. Park, J.-S. Min, J.-W. Lim, S.-W. Kang: Theoretical evaluation of film growth rate during atomic layer epitaxy, Appl. Surf. Sci. 158, 81-91 (2000) 80
-
(2000)
Appl. Surf. Sci.
, vol.158
, pp. 81-91
-
-
Park, H.-S.1
Min, J.-S.2
Lim, J.-W.3
Kang, S.-W.4
-
27
-
-
0035425724
-
Modelling sublimation and atomic layer epitaxy in the presence of competing surface reconstructions
-
81
-
M. Ahr, M. Biehl: Modelling sublimation and atomic layer epitaxy in the presence of competing surface reconstructions, Surf. Sci. 488, L553-L560 (2001) 81
-
(2001)
Surf. Sci.
, vol.488
-
-
Ahr, M.1
Biehl, M.2
-
28
-
-
0842266656
-
3 ALD conformity and deposition rate from oxygen precursor reactivity
-
81, 82
-
3 ALD conformity and deposition rate from oxygen precursor reactivity, in 2008 IEDM Techn. Digest (2003) pp. 245-248 81, 82
-
(2003)
2008 IEDM Techn. Digest
, pp. 245-248
-
-
Prechtl, G.1
Kersch, A.2
Icking-Konert, G.S.3
Jacobs, W.4
Hecht, T.5
Boubekeur, H.6
Schröder, U.7
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