Critical thickness and lattice relaxation of Mg-rich strained Mg 0.37Zn 0.63O(0001) layers towards multi-quantum-wells

Journal of Applied Physics

Volumn 99, Issue 2, 2006, Pages

  Matsui, Hiroaki ^a   Tabata, Hitoshi ^a   Hasuike, Noriyuki ^b   Harima, Hiroshi ^b  

^a OSAKA UNIVERSITY   (Japan)

^b KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROEPITAXY; LAYER THICKNESS; MULTI QUANTUM WELLS; NANODOTS; PYRAMIDAL HILLOCKS;

ATOMIC FORCE MICROSCOPY; ELECTRIC CONDUCTIVITY; LASERS; LATTICE CONSTANTS; MAGNESIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SUBSTRATES; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 31644443820     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2161422     Document Type: Article

References (37)

1. A. Tsukazaki, Nat. Mater. 4, 42 (2005).
2. D. C. Look and B. Claflin, Phys. Status Solidi B 241, 624 (2004).
3. T. Takagi, H. Tanaka, S. Fujita, and S. Fujita, Jpn. J. Appl. Phys., Part 2 42, L401 (2003).
4. Y. Kwon, Y. Li, Y. W. Heo, M. Jones, P. H. Holloway, D. P. Norton, Z. V. Park, and S. Li, Appl. Phys. Lett. 84, 2685 (2004).
5. A. Ohtomo, Appl. Phys. Lett. 72, 2466 (1998).
6. S. Fujita, T. Takagi, H. Tanaka, and S. Fujita, Phys. Status Solidi B 241, 599 (2004).
7. I. Takeuchi, W. Yang, K. S. Chang, M. A. Aronova, T. Venkatesan, R. D. Vispute, and L. A. Bendersky, J. Appl. Phys. 94, 7336 (2003).
8. A. Ohtomo, M. Kawasaki, I. Ohkubo, H. Koinuma, T. Yasuda, and Y. Segawa, Appl. Phys. Lett. 75, 980 (1999).
9. A. Ohtomo, Appl. Phys. Lett. 77, 2204 (2000).
10. H. D. Sun, T. Makino, Y. Segawa, M. Kawasaki, A. Ohtomo, K. Tamura, and H. Koinuma, J. Appl. Phys. 91, 1993 (2002).
11. R. Dimitorv, M. Murphy, J. Smart, W. Schaff, J. R. Shealy, L. F. Eastman, U. Ambacher, and M. Stutamann, J. Appl. Phys. 87, 3375 (2000).
12. M. Sumiya, S. Nakamura, S. F. ChiChibu, K. Mizuno, M. Furusawa, and M. Yoshimoto, Appl. Phys. Lett. 77, 2512 (2000).
13. H. Matsui, H. Saeki, T. Kawai, A. Sasaki, M. Yoshimoto, M. Tsubaki, and H. Tabata, J. Vac. Sci. Technol. B 22, 2454 (2004).
14. H. Kato, M. Sano, K. Miyamoto, and T. Yao, Jpn. J. Appl. Phys., Part 2 42, L1002 (2003).
15. G. J. Whaley and P. I. Cohen, Appl. Phys. Lett. 9, 144 (1990).
16. C. W. Snyder, B. G. Orr, and H. Munekata, Appl. Phys. Lett. 62, 46 (1992).
17. N. Gradjean and J. Massies, Appl. Phys. Lett. 72, 1078 (1998).
18. H. Matsui, H. Saeki, H. Tabata, and T. Kawai, J. Electrochem. Soc. 0013-4651 10.1149/1.1594732 150, G508 (2003); H. Matsui, H. Saeki, H. Tabata, and T. Kawai, Jpn. J. Appl. Phys., Part 1, 42, 5494 (2003).
19. H. Matsui, H. Saeki, H. Tabata, and T. Kawai, J. Electrochem. Soc. 0013-4651 10.1149/1.1594732 150, G508 (2003); H. Matsui, H. Saeki, H. Tabata, and T. Kawai, Jpn. J. Appl. Phys., Part 1, 42, 5494 (2003).
20. H. Matsui, H. Saeki, T. Kawai, B. Mizobuchi, and H. Tabata, J. Appl. Phys. 95, 5882 (2005).
21. P. Honvington, D. Drouin, R. Gauvin, D. C. Joy, and N. Evans, Scanning 19, 29 (1997).
22. P. Hovington, D. Drouin, and R. Gauvin, Scanning 19, 1 (1997).
23. R. E. Honig and D. A. Kramer, RCA Rev. 30, 285 (1969).
24. H. Nakano and T. Yao, Jpn. J. Appl. Phys., Part 2 28, L352 (1989).
25. P. R. Berger, K. Chang, P. Bhattacharya, and J. Singh, Appl. Phys. Lett. 53, 684 (1998).
26. C. X. Shan, J. Cryst. Growth 265, 541 (2004).
27. M. Shimizu, Y. Kawaguchi, K. Hiramatsu, and N. Sawaki, Jpn. J. Appl. Phys., Part 1 36, 3381 (1997).
28. S. Pereira, Appl. Phys. Lett. 81, 1207 (2002).
29. T. Sugahara, M. Hao, D. Nakagaa, Y. Naoi, K. Nishi, and S. Sakai, Jpn. J. Appl. Phys., Part 2 37, L1195 (1998).
30. J. W. Matthews, S. Mader, and T. B. Light, J. Appl. Phys. 41, 3800 (1970).
31. J. W. Matthews and A. E. Blakeslec, J. Cryst. Growth 27, 118 (1974).
32. S. S. Srinivasan, L. Geng, R. Liu, F. A. Ponce, Y. Narukawa, and S. Tanaka, Appl. Phys. Lett. 25, 5187 (2003).
33. R. People and J. C. Bean, Appl. Phys. Lett. 47, 322 (1985).
34. P. F. Fewster, X-ray Scattering from Semiconductors (Imperial College Press, London, 2000).
35. B. P. Zhang, N. T. Binh, K. Wakatsuki, C. Y. Liu, Y. Segawa, and N. Usami, Appl. Phys. Lett. 86, 032105 (2005).
36. N. V. Lomasnov, V. V. Travnikov, S. O. Kognovitskǐ, S. A. Gurevich, S. I. Nesterov, V. I. Skopina, M. Rabe, and F. Henneberger, Phys. Solid State 40, 1413 (1998).
37. S. Tsujino, Appl. Phys. Lett. 84, 2829 (2004).