Effect of MgZnO-layer capping on optical properties of ZnO epitaxial layers

Applied Physics Letters

Volumn 81, Issue 12, 2002, Pages 2172-2174

  Makino, T ^a   Tamura, K ^a   Chia, C H ^a   Segawa, Y ^a   Kawasaki, M ^b   Ohtomo, A ^b   Koinuma, H ^c  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BOUND EXCITON; CAPPED SAMPLES; EMISSION BANDS; EPITAXIALLY GROWN; EXCITON EMISSION; FREE EXCITONS; FREE-EXCITON EMISSIONS; IDENTICAL CONDITIONS; LASER MOLECULAR BEAM EPITAXY; LATTICE-MATCHED; PHOTOLUMINESCENCE SPECTRUM; REFLECTIVITY SPECTRA; SPECTRAL ASSIGNMENTS; TEMPERATURE DEPENDENT; TWO LAYERS; ZNO; ZNO LAYERS;

EPITAXIAL GROWTH; EXCITONS; PHOTOLUMINESCENCE; REFLECTION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; ZINC OXIDE;

OPTICAL PROPERTIES;

EID: 79956003443     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1506783     Document Type: Article

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