Room-temperature photoluminescence from ZnOZnMgO multiple quantum wells grown on Si(111) substrates

Applied Physics Letters

Volumn 91, Issue 2, 2007, Pages

  Gu, X Q ^a   Zhu, L P ^a   Ye, Z Z ^a   He, H P ^a   Zhang, Y Z ^a   Huang, F ^a   Qiu, M X ^a   Zeng, Y J ^a   Liu, F ^b   Jaeger, W ^c  

^a ZHEJIANG UNIVERSITY   (China)

^b ZHEJIANG UNIVERSITY   (China)

^c UNIVERSITY OF KIEL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

PULSED LASER DEPOSITION; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

EMISSION ENERGY; PERIODIC STRUCTURE; QUANTUM CONFINEMENT EFFECTS; ROOM-TEMPERATURE;

PHOTOLUMINESCENCE;

EID: 34547174164     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2755922     Document Type: Article

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