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Applied Physics Letters

Volumn 102, Issue 2, 2013, Pages

Improving dielectric properties of epitaxial Gd2O3 thin films on silicon by nitrogen doping

(4) Roy Chaudhuri, Ayan a Fissel, A a Archakam, V R a,b Osten, H J a

a LEIBNIZ UNIVERSITY HANNOVER (Germany)

b VIT UNIVERSITY (India)

Author keywords

[No Author keywords available]

Indexed keywords

ADVERSE EFFECT; CAPACITANCE VOLTAGE CHARACTERISTIC; DIELECTRIC LAYER; INDUCED DEFECTS; NITROGEN INCORPORATION; NITROGEN-DOPING; NITROUS OXIDE; OXIDE LAYER; SECONDARY ION MASS SPECTROSCOPY; SI(111) SUBSTRATE; SOLID SOURCE MOLECULAR BEAM EPITAXY; SUBSTANTIAL REDUCTION; SUBSTITUTIONAL NITROGEN;

DIELECTRIC PROPERTIES; EPITAXIAL GROWTH; NITROGEN; NITROGEN OXIDES; PHOTOELECTRONS; SECONDARY ION MASS SPECTROMETRY; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

GADOLINIUM;

EID: 84872691295 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4775688 Document Type: Article

Times cited : (25)

References (33)

1
- 0000793139
- G. E. Moore, Electronics 38, 114ff (1965).
- (1965) Electronics , vol.38
- Moore, G.E.¹

2
- 0030291621
- 10.1557/JMR.1996.0350
- K. J. Hubbard and D. G. Schlom, J. Mater. Res. 11, 2757 (1996). 10.1557/JMR.1996.0350
- (1996) J. Mater. Res. , vol.11 , pp. 2757
- Hubbard, K.J.¹ Schlom, D.G.²

3
- 54949135456
- 10.1002/pssa.200723509
- H. J. Osten, A. Laha, M. Czernohorsky, E. Bugiel, R. Dargis, and A. Fissel, Phys. Status Solidi A 205, 695 (2008). 10.1002/pssa.200723509
- (2008) Phys. Status Solidi A , vol.205 , pp. 695
- Osten, H.J.¹ Laha, A.² Czernohorsky, M.³ Bugiel, E.⁴ Dargis, R.⁵ Fissel, A.⁶

4
- 80055017195
- in, Vol. 220, edited by E. Gusev (Springer, The Netherlands)
- J. Robertson, K. Xiong, S. J. Clark, and S. J. Clark, in Defects in High-k Gate Dielectric Stacks, NATO Science Series, Vol. 220, edited by, E. Gusev, (Springer, The Netherlands, 2006), p. 175.
- (2006) Defects in High-k Gate Dielectric Stacks, NATO Science Series , pp. 175
- Robertson, J.¹ Xiong, K.² Clark, S.J.³ Clark, S.J.⁴

5
- 12344337788
- 10.1016/j.sse.2004.11.011
- J. Robertson, Solid-State Electron. 49, 283 (2005). 10.1016/j.sse.2004. 11.011
- (2005) Solid-State Electron. , vol.49 , pp. 283
- Robertson, J.¹

6
- 33746062052
- 10.1063/1.2221521
- K. Xiong, J. Robertson, and S. J. Clark, Appl. Phys. Lett. 89, 022907 (2006). 10.1063/1.2221521
- (2006) Appl. Phys. Lett. , vol.89 , pp. 022907
- Xiong, K.¹ Robertson, J.² Clark, S.J.³

7
- 34248667023
- 10.1016/j.mee.2007.04.020
- K. Tse, D. Liu, K. Xiong, and J. Robertson, Microelectron. Eng. 84, 2028 (2007). 10.1016/j.mee.2007.04.020
- (2007) Microelectron. Eng. , vol.84 , pp. 2028
- Tse, K.¹ Liu, D.² Xiong, K.³ Robertson, J.⁴

8
- 33646150430
- 10.1063/1.2194227
- M. Czernohorsky, E. Bugiel, H. J. Osten, A. Fissel, and O. Kirfel, Appl. Phys. Lett. 88, 152905 (2006). 10.1063/1.2194227
- (2006) Appl. Phys. Lett. , vol.88 , pp. 152905
- Czernohorsky, M.¹ Bugiel, E.² Osten, H.J.³ Fissel, A.⁴ Kirfel, O.⁵

9
- 0029322675
- 10.1016/S0040-6090(94)06487-3
- G. Bonnet, M. Lachkar, J. C. Colson, and J. P. Larpin, Thin Solid Films 261, 31 (1995). 10.1016/S0040-6090(94)06487-3
- (1995) Thin Solid Films , vol.261 , pp. 31
- Bonnet, G.¹ Lachkar, M.² Colson, J.C.³ Larpin, J.P.⁴

10
- 77956398681
- 10.1116/1.3456126
- T. M. Pan, X. C. Wu, and L. C. Yen, J. Vac. Sci. Technol. A 28, 1084 (2010). 10.1116/1.3456126
- (2010) J. Vac. Sci. Technol. A , vol.28 , pp. 1084
- Pan, T.M.¹ Wu, X.C.² Yen, L.C.³

11
- 20244386271
- 10.1063/1.1899232
- N. Umezawa, K. Shiraishi, T. Ohno, H. Watanabe, T. Chikyow, K. Torii, K. Yamabe, K. Yamada, H. Kitajima, and T. Arikado, Appl. Phys. Lett. 86, 143507 (2005). 10.1063/1.1899232
- (2005) Appl. Phys. Lett. , vol.86 , pp. 143507
- Umezawa, N.¹ Shiraishi, K.² Ohno, T.³ Watanabe, H.⁴ Chikyow, T.⁵ Torii, K.⁶ Yamabe, K.⁷ Yamada, K.⁸ Kitajima, H.⁹ Arikado, T.¹⁰

12
- 84865271835
- 10.1063/1.4744042
- H. Li and J. Robertson, J. Appl. Phys. 112, 034108 (2012). 10.1063/1.4744042
- (2012) J. Appl. Phys. , vol.112 , pp. 034108
- Li, H.¹ Robertson, J.²

13
- 84872700430
- K. Seo, R. Sreenivasan, P. C. McIntyre, and K. C. Saraswat, Tech. Dig.-Int. Electron Devices Meet. 2005, 420.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2005 , pp. 420
- Seo, K.¹ Sreenivasan, R.² McIntyre, P.C.³ Saraswat, K.C.⁴

14
- 0036932242
- 10.1109/IEDM.2002.1175972
- C. H. Choi, S. J. Rhee, T. S. Jeon, N. Lu, J. H. Sim, R. Clark, M. Niwa, and D. L. Kwong, Tech. Dig.-Int. Electron Devices Meet. 857 (2002). 10.1109/IEDM.2002.1175972
- (2002) Tech. Dig. - Int. Electron Devices Meet. , pp. 857
- Choi, C.H.¹ Rhee, S.J.² Jeon, T.S.³ Lu, N.⁴ Sim, J.H.⁵ Clark, R.⁶ Niwa, M.⁷ Kwong, D.L.⁸

15
- 33745745755
- 10.1016/j.sse.2006.05.008
- X. P. Wang, M. F. Li, A. Chin, C. X. Zhu, J. Shao, W. Lu, X. C. Shen, X. F. Yu, R. Chi, C. Shen, A. C. H. Huan, J. S. Pan, A. Y. Du, P. Lo, D. S. H. Chan, and D. L. Kwong, Solid-State Electron. 50, 986 (2006). 10.1016/j.sse.2006.05.008
- (2006) Solid-State Electron. , vol.50 , pp. 986
- Wang, X.P.¹ Li, M.F.² Chin, A.³ Zhu, C.X.⁴ Shao, J.⁵ Lu, W.⁶ Shen, X.C.⁷ Yu, X.F.⁸ Chi, R.⁹ Shen, C.¹⁰ Huan, A.C.H.¹¹ Pan, J.S.¹² Du, A.Y.¹³ Lo, P.¹⁴ Chan, D.S.H.¹⁵ Kwong, D.L.¹⁶

16
- 33751071323
- 10.1063/1.2388146
- G. Dutta, K. P. S. S. Hembram, G. M. Rao, and U. Waghmare, Appl. Phys. Lett. 89, 202904 (2006). 10.1063/1.2388146
- (2006) Appl. Phys. Lett. , vol.89 , pp. 202904
- Dutta, G.¹ Hembram, K.P.S.S.² Rao, G.M.³ Waghmare, U.⁴

17
- 0036139653
- 10.1063/1.1418420
- K. Chu, M. L. Chang, M. L. Steigerwald, R. M. Fleming, R. L. Opila, R. B. van Dover, and C. D. W. Jones, J. Appl. Phys. 91, 308 (2002). 10.1063/1.1418420
- (2002) J. Appl. Phys. , vol.91 , pp. 308
- Chu, K.¹ Chang, M.L.² Steigerwald, M.L.³ Fleming, R.M.⁴ Opila, R.L.⁵ Van Dover, R.B.⁶ Jones, C.D.W.⁷

18
- 80055009907
- 10.1063/1.3646104
- A. Laha, B. Ai, P. R. P. Babu, A. Fissel, and H. J. Osten, Appl. Phys. Lett. 99, 152902 (2011). 10.1063/1.3646104
- (2011) Appl. Phys. Lett. , vol.99 , pp. 152902
- Laha, A.¹ Ai, B.² Babu, P.R.P.³ Fissel, A.⁴ Osten, H.J.⁵

19
- 84864249990
- 10.1063/1.4737158
- L. Liu, J. P. Xu, F. Ji, J. X. Chen, and P. T. Lai, Appl. Phys. Lett. 101, 033501 (2012). 10.1063/1.4737158
- (2012) Appl. Phys. Lett. , vol.101 , pp. 033501
- Liu, L.¹ Xu, J.P.² Ji, F.³ Chen, J.X.⁴ Lai, P.T.⁵

20
- 20844456756
- 10.1063/1.1935768
- C. L. Chen, K. -S. C. Liao, C.-H. Huang, and T. K. Wang, Appl. Phys. Lett. 86, 212902 (2005). 10.1063/1.1935768
- (2005) Appl. Phys. Lett. , vol.86 , pp. 212902
- Chen, C.L.¹ Liao, K.-S.C.² Huang, C.-H.³ Wang, T.K.⁴

21
- 36549091992
- 10.1063/1.338818
- P. Pan, J. Appl. Phys. 61, 284 (1987). 10.1063/1.338818
- (1987) J. Appl. Phys. , vol.61 , pp. 284
- Pan, P.¹

22
- 0026908550
- 10.1109/55.192772
- Z. H. Liu, H.-J. Wann, P. K. Ko, C. Hu, and Y. C. Cheng, IEEE Electron Dev. Lett. 13, 402 (1992). 10.1109/55.192772
- (1992) IEEE Electron Dev. Lett. , vol.13 , pp. 402
- Liu, Z.H.¹ Wann, H.-J.² Ko, P.K.³ Hu, C.⁴ Cheng, Y.C.⁵

23
- 0024610593
- 10.1109/16.19935
- T. Hori, H. Iwasaki, and K. Tsuji, IEEE Trans. Electron Devices 36, 340 (1989). 10.1109/16.19935
- (1989) IEEE Trans. Electron Devices , vol.36 , pp. 340
- Hori, T.¹ Iwasaki, H.² Tsuji, K.³

24
- 21544470315
- 10.1063/1.103550
- H. Hwang, W. Ting, B. Maiti, D. L. Kwong, and J. Lee, Appl. Phys. Lett. 57, 1010 (1990). 10.1063/1.103550
- (1990) Appl. Phys. Lett. , vol.57 , pp. 1010
- Hwang, H.¹ Ting, W.² Maiti, B.³ Kwong, D.L.⁴ Lee, J.⁵

25
- 33749503742
- 10.1063/1.2360209
- A. Laha, H. J. Osten, and A. Fissel, Appl. Phys. Lett. 89, 143514 (2006). 10.1063/1.2360209
- (2006) Appl. Phys. Lett. , vol.89 , pp. 143514
- Laha, A.¹ Osten, H.J.² Fissel, A.³

26
- 77249101651
- 10.1063/1.3318260
- A. Laha, H. J. Osten, and A. Fissel, Appl. Phys. Lett. 96, 072903 (2010). 10.1063/1.3318260
- (2010) Appl. Phys. Lett. , vol.96 , pp. 072903
- Laha, A.¹ Osten, H.J.² Fissel, A.³

27
- 0035872897
- 10.1063/1.1361065
- G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001). 10.1063/1.1361065
- (2001) J. Appl. Phys. , vol.89 , pp. 5243
- Wilk, G.D.¹ Wallace, R.M.² Anthony, J.M.³

28
- 44349149232
- 10.1063/1.2936309
- X. J. Wang, L. D. Zhang, J. P. Zhang, M. Liu, and G. He, Appl. Phys. Lett. 92, 202906 (2008). 10.1063/1.2936309
- (2008) Appl. Phys. Lett. , vol.92 , pp. 202906
- Wang, X.J.¹ Zhang, L.D.² Zhang, J.P.³ Liu, M.⁴ He, G.⁵

29
- 34547277537
- 10.1103/PhysRevLett.98.196101
- S. Guha and V. Naryanan, Phys. Rev. Lett. 98, 196101 (2007). 10.1103/PhysRevLett.98.196101
- (2007) Phys. Rev. Lett. , vol.98 , pp. 196101
- Guha, S.¹ Naryanan, V.²

30
- 0000044129
- 10.1063/1.373747
- R. M. Fleming, D. V. Lang, C. D. W. Jones, M. L. Steigerwald, D. W. Murphy, G. B. Alers, Y.-H. Wong, R. B. van Dover, J. R. Kwo, and A. M. Sergent, J. Appl. Phys. 88, 850 (2000). 10.1063/1.373747
- (2000) J. Appl. Phys. , vol.88 , pp. 850
- Fleming, R.M.¹ Lang, D.V.² Jones, C.D.W.³ Steigerwald, M.L.⁴ Murphy, D.W.⁵ Alers, G.B.⁶ Wong, Y.-H.⁷ Van Dover, R.B.⁸ Kwo, J.R.⁹ Sergent, A.M.¹⁰

31
- 33846096369
- 10.1063/1.2424441
- P. Broqvist and A. Pasquarello, Appl. Phys. Lett. 89, 262904 (2006). 10.1063/1.2424441
- (2006) Appl. Phys. Lett. , vol.89 , pp. 262904
- Broqvist, P.¹ Pasquarello, A.²

32
- 67650735821
- 10.1063/1.3176214
- K. Xiong and J. Robertson, Appl. Phys. Lett. 95, 022903 (2009). 10.1063/1.3176214
- (2009) Appl. Phys. Lett. , vol.95 , pp. 022903
- Xiong, K.¹ Robertson, J.²

33
- 77949819604
- 10.1063/1.3293440
- D. Liu, S. J. Clark, and J. Robertson, Appl. Phys. Lett. 96, 032905 (2010). 10.1063/1.3293440
- (2010) Appl. Phys. Lett. , vol.96 , pp. 032905
- Liu, D.¹ Clark, S.J.² Robertson, J.³

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