SCOPUS 정보 검색 플랫폼

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 28, Issue 5, 2010, Pages 1084-1088

Effects of postdeposition annealing on physical and electrical properties of high- k Yb2 TiO5 dielectrics

(3) Pan, Tung Ming a Wu, Xin Chang a Yen, Li Chen a

a CHANG GUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; CAPACITANCE-EQUIVALENT THICKNESS; CHEMICAL FEATURES; CONSTANT VOLTAGE STRESS; DENSITY OF INTERFACE STATE; ELECTRICAL PROPERTY; GATE VOLTAGES; GATE-LEAKAGE CURRENT; GROWTH CONDITIONS; HYSTERESIS VOLTAGE; POST DEPOSITION ANNEALING; REACTIVE CO-SPUTTERING; SI (100) SUBSTRATE; SMOOTH SURFACE; TIO;

ANNEALING; ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; GATES (TRANSISTOR); LEAKAGE CURRENTS; TITANIUM; TITANIUM OXIDES; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; YTTERBIUM;

GATE DIELECTRICS;

EID: 77956398681 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.3456126 Document Type: Article

Times cited : (9)

References (23)

1
- 0039436914
- JAPIAU 0021-8979,. 10.1063/1.1385803
- M. L. Green, E. P. Gusev, R. Degraeve, and E. Garfunkel, J. Appl. Phys. JAPIAU 0021-8979 90, 2057 (2001). 10.1063/1.1385803
- (2001) J. Appl. Phys. , vol.90 , pp. 2057
- Green, M.L.¹ Gusev, E.P.² Degraeve, R.³ Garfunkel, E.⁴

2
- 33748614600
- Advanced high-κ dielectric stacks with polySi and metal gates: Recent progress and current challenges
- DOI 10.1147/rd.504.0387
- E. P. Gusev, V. Narayanan, and M. M. Frank, IBM J. Res. Dev. IBMJAE 0018-8646 50, 387 (2006). 10.1147/rd.504.0387 (Pubitemid 44375469)
- (2006) IBM Journal of Research and Development , vol.50 , Issue.4-5 , pp. 387-410
- Gusev, E.P.¹ Narayanan, V.² Frank, M.M.³

3
- 0035872897
- JAPIAU 0021-8979,. 10.1063/1.1361065
- G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. JAPIAU 0021-8979 89, 5243 (2001). 10.1063/1.1361065
- (2001) J. Appl. Phys. , vol.89 , pp. 5243
- Wilk, G.D.¹ Wallace, R.M.² Anthony, J.M.³

4
- 33846582951
- Physical and electrical properties of lanthanum oxide dielectrics with Al and AlTaN metal gates
- DOI 10.1149/1.2428415
- T. M. Pan, C. L. Chen, W. W. Yeh, and W. J. Lai, Electrochem. Solid-State Lett. ESLEF6 1099-0062 10, H101 (2007). 10.1149/1.2428415 (Pubitemid 46184794)
- (2007) Electrochemical and Solid-State Letters , vol.10 , Issue.3
- Pan, T.-M.¹ Chen, C.-L.² Yeh, W.-W.³ Lai, W.-J.⁴

5
- 33645932313
- JAPIAU 0021-8979,. 10.1063/1.2188051
- A. Fissel, Z. Elassar, O. Kirfel, E. Bugiel, M. Czernohorsky, and H. J. Osten, J. Appl. Phys. JAPIAU 0021-8979 99, 074105 (2006). 10.1063/1.2188051
- (2006) J. Appl. Phys. , vol.99 , pp. 074105
- Fissel, A.¹ Elassar, Z.² Kirfel, O.³ Bugiel, E.⁴ Czernohorsky, M.⁵ Osten, H.J.⁶

6
- 29744454327
- Excellent frequency dispersion of thin gadolinium oxide high- k gate dielectrics
- DOI 10.1063/1.2152107, 262908
- T. M. Pan, C. S. Liao, H. H. Hsu, C. L. Chen, J. D. Lee, K. T. Wang, and J. C. Wang, Appl. Phys. Lett. APPLAB 0003-6951 87, 262908 (2005). 10.1063/1.2152107 (Pubitemid 43032045)
- (2005) Applied Physics Letters , vol.87 , Issue.26 , pp. 1-3
- Pan, T.-M.¹ Liao, C.-S.² Hsu, H.-H.³ Chen, C.-L.⁴ Lee, J.-D.⁵ Wang, K.-T.⁶ Wang, J.-C.⁷

7
- 62649140005
- ESLEF6 1099-0062,. 10.1149/1.3086266
- S. Van Elshocht, C. Adelmann, P. Lehnen, and S. De Gendt, Electrochem. Solid-State Lett. ESLEF6 1099-0062 12, G17 (2009). 10.1149/1.3086266
- (2009) Electrochem. Solid-State Lett. , vol.12 , pp. 17
- Van Elshocht, S.¹ Adelmann, C.² Lehnen, P.³ De Gendt, S.⁴

8
- 4544384728
- TDIMD5 0163-1918.
- H. Iwai, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2002, 625.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2002 , pp. 625
- Iwai, H.¹

9
- 0347599091
- JALCEU 0925-8388,. 10.1016/S0925-8388(03)00615-7
- A. A. Dakhel, J. Alloys Compd. JALCEU 0925-8388 365, 233 (2004). 10.1016/S0925-8388(03)00615-7
- (2004) J. Alloys Compd. , vol.365 , pp. 233
- Dakhel, A.A.¹

10
- 0042848701
- JESOAN 0013-4651,. 10.1149/1.1581278
- S. Ohmi, C. Kobayashi, I. Kashiwagi, C. Ohshima, H. Ishiwara, and H. Iwai, J. Electrochem. Soc. JESOAN 0013-4651 150, F134 (2003). 10.1149/1.1581278
- (2003) J. Electrochem. Soc. , vol.150 , pp. 134
- Ohmi, S.¹ Kobayashi, C.² Kashiwagi, I.³ Ohshima, C.⁴ Ishiwara, H.⁵ Iwai, H.⁶

11
- 32944454322
- Moisture-absorption-induced permittivity deterioration and surface roughness enhancement of lanthanum oxide films on silicon
- DOI 10.1063/1.2174840
- Y. Zhao, M. Toyama, K. Kita, K. Kyuno, and A. Toriumi, Appl. Phys. Lett. APPLAB 0003-6951 88, 072904 (2006). 10.1063/1.2174840 (Pubitemid 43261834)
- (2006) Applied Physics Letters , vol.88 , Issue.7 , pp. 072904
- Zhao, Y.¹ Toyama, M.² Kita, K.³ Kyuno, K.⁴ Toriumi, A.⁵

12
- 33845946419
- x films with strong moisture resistance
- DOI 10.1063/1.2420794
- Y. Zhao, K. Kita, K. Kyuno, and A. Toriumi, Appl. Phys. Lett. APPLAB 0003-6951 89, 252905 (2006). 10.1063/1.2420794 (Pubitemid 46035172)
- (2006) Applied Physics Letters , vol.89 , Issue.25 , pp. 252905
- Zhao, Y.¹ Kita, K.² Kyuno, K.³ Toriumi, A.⁴

13
- 22544473634
- 3
- DOI 10.1149/1.1914751
- A. U. Mane, Ch. Wenger, T. Schroeder, P. Zaumseil, G. Lippert, G. Weidner, and H. J. Mussig, J. Electrochem. Soc. JESOAN 0013-4651 152, C399 (2005). 10.1149/1.1914751 (Pubitemid 41013484)
- (2005) Journal of the Electrochemical Society , vol.152 , Issue.6
- Mane, A.U.¹ Wenger, Ch.² Schroeder, T.³ Zaumseil, P.⁴ Lippert, G.⁵ Weidner, G.⁶ Mussig, H.-J.⁷

14
- 0000645587
- APPLAB 0003-6951,. 10.1063/1.124058
- R. B. van Dover, Appl. Phys. Lett. APPLAB 0003-6951 74, 3041 (1999). 10.1063/1.124058
- (1999) Appl. Phys. Lett. , vol.74 , pp. 3041
- Van Dover, R.B.¹

15
- 0035943883
- APPLAB 0003-6951,. 10.1063/1.1402647
- J. Chen, J. Lian, L. M. Wang, R. C. Ewing, and L. A. Boatner, Appl. Phys. Lett. APPLAB 0003-6951 79, 1989 (2001). 10.1063/1.1402647
- (2001) Appl. Phys. Lett. , vol.79 , pp. 1989
- Chen, J.¹ Lian, J.² Wang, L.M.³ Ewing, R.C.⁴ Boatner, L.A.⁵

16
- 24144468207
- Titanium-added praseodymium silicate high- k layers on Si(001)
- DOI 10.1063/1.1978978, 022902
- T. Schroeder, G. Lupina, J. Dabrowski, A. Mane, Ch. Wenger, G. Lippert, and H. J. Mussig, Appl. Phys. Lett. APPLAB 0003-6951 87, 022902 (2005). 10.1063/1.1978978 (Pubitemid 41227681)
- (2005) Applied Physics Letters , vol.87 , Issue.2 , pp. 1-3
- Schroeder, T.¹ Lupina, G.² Dabrowski, J.³ Mane, A.⁴ Wenger, Ch.⁵ Lippert, G.⁶ Mussig, H.-J.⁷

17
- 56749091236
- JESOAN 0013-4651,. 10.1149/1.3005993
- T. M. Pan and W. S. Huang, J. Electrochem. Soc. JESOAN 0013-4651 156, G6 (2009). 10.1149/1.3005993
- (2009) J. Electrochem. Soc. , vol.156 , pp. 6
- Pan, T.M.¹ Huang, W.S.²

18
- 45149088207
- JAPIAU 0021-8979,. 10.1063/1.2936895
- V. Mikhelashvili, G. Eisenstein, P. Thangadurai, W. D. Kaplan, R. Brener, and C. Saguy, J. Appl. Phys. JAPIAU 0021-8979 103, 114106 (2008). 10.1063/1.2936895
- (2008) J. Appl. Phys. , vol.103 , pp. 114106
- Mikhelashvili, V.¹ Eisenstein, G.² Thangadurai, P.³ Kaplan, W.D.⁴ Brener, R.⁵ Saguy, C.⁶

19
- 33747100962
- Ti 2p and O 1s core levels and chemical bonding in titanium-bearing oxides
- DOI 10.1016/j.elspec.2006.02.004, PII S0368204806000107
- V. V. Atuchin, V. G. Kesler, N. V. Pervukhina, and Z. Zhang, J. Electron Spectrosc. Relat. Phenom. JESRAW 0368-2048 152, 18 (2006). 10.1016/j.elspec. 2006.02.004 (Pubitemid 44218801)
- (2006) Journal of Electron Spectroscopy and Related Phenomena , vol.152 , Issue.1-2 , pp. 18-24
- Atuchin, V.V.¹ Kesler, V.G.² Pervukhina, N.V.³ Zhang, Z.⁴

20
- 0019056629
- SSELA5 0038-1101,. 10.1016/0038-1101(80)90064-7
- W. A. Hill and C. C. Coleman, Solid-State Electron. SSELA5 0038-1101 23, 987 (1980). 10.1016/0038-1101(80)90064-7
- (1980) Solid-State Electron. , vol.23 , pp. 987
- Hill, W.A.¹ Coleman, C.C.²

21
- 0000667363
- APPLAB 0003-6951,. 10.1063/1.126199
- L. Kim, J. Kim, D. Jung, and Y. Roh, Appl. Phys. Lett. APPLAB 0003-6951 76, 1881 (2000). 10.1063/1.126199
- (2000) Appl. Phys. Lett. , vol.76 , pp. 1881
- Kim, L.¹ Kim, J.² Jung, D.³ Roh, Y.⁴

22
- 0003950343
- 2nd ed. (Wiley, New York).
- S. M. Sze, Physics of Semiconductors, 2nd ed. (Wiley, New York, 1981).
- (1981) Physics of Semiconductors
- Sze, S.M.¹

23
- 20944450556
- Electrical conduction mechanisms of metal La2 O3 Si structure
- DOI 10.1063/1.1896435, 103503
- F. C. Chiu, H. W. Chou, and J. Y. Lee, J. Appl. Phys. JAPIAU 0021-8979 97, 103503 (2005). 10.1063/1.1896435 (Pubitemid 40866040)
- (2005) Journal of Applied Physics , vol.97 , Issue.10 , pp. 1-5
- Chiu, F.-C.¹ Chou, H.-W.² Lee, J.Y.-M.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.