SCOPUS 정보 검색 플랫폼

Volumn 3, Issue 4, 2013, Pages 1179-1185

Atomic layer deposition and characterization of vanadium oxide thin films

(10) Blanquart, Timothee a Niinistö, Jaakko a Gavagnin, Marco b Longo, Valentino c Heikkilä, Mikko a Puukilainen, Esa a Pallem, Venkateswara R d Dussarrat, Christian d Ritala, Mikko a Leskelä, Markku a

a UNIVERSITY OF HELSINKI (Finland)

b VIENNA UNIVERSITY OF TECHNOLOGY (Austria)

c EINDHOVEN UNIVERSITY OF TECHNOLOGY (Netherlands)

d AIR LIQUIDE (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; OZONE; PHOTOELECTRONS; STOICHIOMETRY; VANADIUM; VANADIUM COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

CONFORMAL DEPOSITION; CONSTANT GROWTH RATES; DEPOSITION TEMPERATURES; FILM STRUCTURE; HIGH ASPECT RATIO STRUCTURES; OXYGEN SOURCES; POST DEPOSITION ANNEALING; PROCESS CONDITION; ROOM TEMPERATURE; VANADIUM OXIDE THIN FILMS;

ATOMIC LAYER DEPOSITION;

EID: 84871739134 PISSN: None EISSN: 20462069 Source Type: Journal
DOI: 10.1039/c2ra22820c Document Type: Article

Times cited : (87)

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