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Volumn 98, Issue 16, 2011, Pages

Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition

(9) Rampelberg, Geert a Schaekers, Marc b Martens, Koen b Xie, Qi a Deduytsche, Davy a De Schutter, Bob a Blasco, Nicolas c Kittl, Jorge b Detavernier, Christophe a

a GHENT UNIVERSITY (Belgium)

b IMEC (Belgium)

c AIR LIQUIDE (France)

Author keywords

[No Author keywords available]

Indexed keywords

A-THERMAL; ATOMIC LAYER; IN-SITU; LOW TEMPERATURES; ORDERS OF MAGNITUDE; PHASE CHANGE; REACTANT GAS; REVERSIBLE CHANGE; REVERSIBLE TRANSITIONS; SEMICONDUCTOR-METAL TRANSITION; TETRAKIS; VANADIUM DIOXIDE;

ATOMIC LAYER DEPOSITION; OZONE; SILICON COMPOUNDS; VANADIUM ALLOYS; X RAY DIFFRACTION;

VANADIUM;

EID: 79955390921 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3579195 Document Type: Article

Times cited : (88)

References (18)

1
- 4244014869
- 0031-9007, 10.1103/PhysRevLett.3.34
- F. J. Morin, Phys. Rev. Lett. 0031-9007 3, 34 (1959). 10.1103/PhysRevLett.3.34
- (1959) Phys. Rev. Lett. , vol.3 , pp. 34
- Morin, F.J.¹

2
- 0000273683
- 0556-2805, 10.1103/PhysRevB.11.4383
- A. Zylbersztejn and N. F. Mott, Phys. Rev. B 0556-2805 11, 4383 (1975). 10.1103/PhysRevB.11.4383
- (1975) Phys. Rev. B , vol.11 , pp. 4383
- Zylbersztejn, A.¹ Mott, N.F.²

3
- 0000953608
- 0021-8898, 10.1107/S0021889879012711
- D. Kucharczyk and T. Niklewski, J. Appl. Crystallogr. 0021-8898 12, 370 (1979). 10.1107/S0021889879012711
- (1979) J. Appl. Crystallogr. , vol.12 , pp. 370
- Kucharczyk, D.¹ Niklewski, T.²

4
- 36549083365
- Two series oxide resistors applicable to high speed and high density nonvolatile memory
- DOI 10.1002/adma.200700251
- M. J. Lee, Y. Park, D. S. Suh, E. H. Lee, S. Seo, D. C. Kim, R. Jung, B. S. Kang, S. E. Ahn, C. B. Lee, D. H. Seo, Y. K. Cha, I. K. Yoo, J. S. Soo Kim, and B. H. Park, Adv. Mater. (Weinheim, Ger.) 0935-9648 19, 3919 (2007). 10.1002/adma.200700251 (Pubitemid 350190438)
- (2007) Advanced Materials , vol.19 , Issue.22 , pp. 3919-3923
- Lee, M.-J.¹ Park, Y.² Suh, D.-S.³ Lee, E.-H.⁴ Seo, S.⁵ Kim, D.-C.⁶ Jung, R.⁷ Kang, B.-S.⁸ Ahn, S.-E.⁹ Lee, C.B.¹⁰ Seo, D.H.¹¹ Cha, Y.-K.¹² Yoo, I.-K.¹³ Kim, J.-S.¹⁴ Park, B.H.¹⁵

5
- 3042581419
- 1367-2630, 10.1088/1367-2630/6/1/052
- H. T. Kim, B. G. Chae, D. H. Youn, S. L. Maeng, G. Kim, K. Y. Kang, and Y. S. Lim, New J. Phys. 1367-2630 6, 52 (2004). 10.1088/1367-2630/6/1/052
- (2004) New J. Phys. , vol.6 , pp. 52
- Kim, H.T.¹ Chae, B.G.² Youn, D.H.³ Maeng, S.L.⁴ Kim, G.⁵ Kang, K.Y.⁶ Lim, Y.S.⁷

6
- 33749366784
- Influence of ambient atmosphere on metal-insulator transition of strained vanadium dioxide ultrathin films
- DOI 10.1063/1.2345600
- K. Nagashima, T. Yanagida, H. Tanaka, and T. Kawai, J. Appl. Phys. 0021-8979 100, 063714 (2006). 10.1063/1.2345600 (Pubitemid 44496126)
- (2006) Journal of Applied Physics , vol.100 , Issue.6 , pp. 063714
- Nagashima, K.¹ Yanagida, T.² Tanaka, H.³ Kawai, T.⁴

7
- 33645526328
- 0003-6951, 10.1063/1.2001139
- D. Brassard, S. Fourmaux, M. Jean-Jacques, J. C. Kieffer, and M. A. El Khakani, Appl. Phys. Lett. 0003-6951 87, 051910 (2005). 10.1063/1.2001139
- (2005) Appl. Phys. Lett. , vol.87 , pp. 051910
- Brassard, D.¹ Fourmaux, S.² Jean-Jacques, M.³ Kieffer, J.C.⁴ El Khakani, M.A.⁵

8
- 54249146064
- 0021-4922, 10.1143/JJAP.47.3067
- S. J. Yun, J. W. Lim, J. S. Noh, B. G. Chae, and H. T. Kim, Jpn. J. Appl. Phys. 0021-4922 47, 3067 (2008). 10.1143/JJAP.47.3067
- (2008) Jpn. J. Appl. Phys. , vol.47 , pp. 3067
- Yun, S.J.¹ Lim, J.W.² Noh, J.S.³ Chae, B.G.⁴ Kim, H.T.⁵

9
- 0036163874
- 0959-9428, 10.1039/b106563g
- M. B. Sahana, M. S. Dharmaprakash, and S. A. Shivashankar, J. Mater. Chem. 0959-9428 12, 333 (2002). 10.1039/b106563g
- (2002) J. Mater. Chem. , vol.12 , pp. 333
- Sahana, M.B.¹ Dharmaprakash, M.S.² Shivashankar, S.A.³

10
- 0036906169
- 0021-8979, 10.1063/1.1518148
- M. B. Sahana, G. N. Subbanna, and S. A. Shivashankar, J. Appl. Phys. 0021-8979 92, 6495 (2002). 10.1063/1.1518148
- (2002) J. Appl. Phys. , vol.92 , pp. 6495
- Sahana, M.B.¹ Subbanna, G.N.² Shivashankar, S.A.³

11
- 42949089870
- In-situ Fourier transform infrared spectroscopy gas phase studies of vanadium (IV) oxide coating by atmospheric pressure chemical vapour deposition using vanadyl (IV) acetylacetonate
- DOI 10.1016/j.tsf.2007.06.026, PII S0040609007009108
- D. Vernardou, M. E. Pemble, and D. W. Sheel, Thin Solid Films 0040-6090 516, 4502 (2008). 10.1016/j.tsf.2007.06.026 (Pubitemid 351618306)
- (2008) Thin Solid Films , vol.516 , Issue.14 , pp. 4502-4507
- Vernardou, D.¹ Pemble, M.E.² Sheel, D.W.³

12
- 79955414330
- U.S. Patent No. 4058430 (15 November).
- T. Suntola and J. Antson, U.S. Patent No. 4058430 (15 November, 1977).
- (1977)
- Suntola, T.¹ Antson, J.²

13
- 21744444606
- Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
- DOI 10.1063/1.1940727, 121301
- R. L. Puurunen, J. Appl. Phys. 0021-8979 97, 121301 (2005). 10.1063/1.1940727 (Pubitemid 40940570)
- (2005) Journal of Applied Physics , vol.97 , Issue.12 , pp. 1-52
- Puurunen, R.L.¹

14
- 65949104055
- 0013-4651, 10.1149/1.3133169
- J. Musschoot, D. Deduytsche, H. Poelman, J. Haemers, R. L. Vanmeirhaeghe, S. Van den Berghe, and C. Detavernier, J. Electrochem. Soc. 0013-4651 156, P122 (2009). 10.1149/1.3133169
- (2009) J. Electrochem. Soc. , vol.156 , pp. 122
- Musschoot, J.¹ Deduytsche, D.² Poelman, H.³ Haemers, J.⁴ Vanmeirhaeghe, R.L.⁵ Van Den Berghe, S.⁶ Detavernier, C.⁷

15
- 35648995895
- Atomic layer deposition of Ti O2 from tetrakis-dimethyl-amido titanium or Ti isopropoxide precursors and H2 O
- DOI 10.1063/1.2798384
- Q. Xie, Y. L. Jiang, C. Detavernier, D. Deduytsche, R. L. Van Meirhaeghe, G. P. Ru, B. Z. Li, and X. P. Qu, J. Appl. Phys. 0021-8979 102, 083521 (2007). 10.1063/1.2798384 (Pubitemid 350025635)
- (2007) Journal of Applied Physics , vol.102 , Issue.8 , pp. 083521
- Xie, Q.¹ Jiang, Y.-L.² Detavernier, C.³ Deduytsche, D.⁴ Van Meirhaeghe, R.L.⁵ Ru, G.-P.⁶ Li, B.-Z.⁷ Qu, X.-P.⁸

16
- 49149124418
- 0013-4651, 10.1149/1.2955724
- Q. Xie, J. Musschoot, D. Deduytsche, R. L. Van Meirhaeghe, C. Detavernier, S. Van den Berghe, Y. L. Jiang, G. P. Ru, B. Z. Li, and X. P. Qu, J. Electrochem. Soc. 0013-4651 155, H688 (2008). 10.1149/1.2955724
- (2008) J. Electrochem. Soc. , vol.155 , pp. 688
- Xie, Q.¹ Musschoot, J.² Deduytsche, D.³ Van Meirhaeghe, R.L.⁴ Detavernier, C.⁵ Van Den Berghe, S.⁶ Jiang, Y.L.⁷ Ru, G.P.⁸ Li, B.Z.⁹ Qu, X.P.¹⁰

17
- 2942672945
- 10.1016/j.elspec.2004.03.004
- G. Silversmit, D. Depla, H. Poelman, G. B. Marin, and R. De Gryse, J. Electron Spectosc. 135, 167 (2004). 10.1016/j.elspec.2004.03.004
- (2004) J. Electron Spectosc. , vol.135 , pp. 167
- Silversmit, G.¹ Depla, D.² Poelman, H.³ Marin, G.B.⁴ De Gryse, R.⁵

18
- 42649083348
- In-situ X-ray Diffraction study of Metal Induced Crystallization of amorphous silicon
- DOI 10.1016/j.tsf.2007.09.037, PII S0040609007016409
- W. Knaepen, C. Detavernier, R. L. Vanmeirhaeghe, J. J. Sweet, and C. Lavoie, Thin Solid Films 0040-6090 516, 4946 (2008). 10.1016/j.tsf.2007.09.037 (Pubitemid 351601828)
- (2008) Thin Solid Films , vol.516 , Issue.15 , pp. 4946-4952
- Knaepen, W.¹ Detavernier, C.² Van Meirhaeghe, R.L.³ Jordan Sweet, J.⁴ Lavoie, C.⁵

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