Electrical properties of V2O5 thin films obtained by atomic layer deposition (ALD)

Journal of Materials Chemistry

Volumn 14, Issue 23, 2004, Pages 3411-3415

  Badot, J C ^a   Mantoux, A ^b   Baffier, N ^a   Dubrunfaut, O ^c   Lincot, D ^d  

^a UNIVERSITÉ PIERRE ET MARIE CURIE   (France)

^b SORBONNE UNIVERSITÉ   (France)

^c UNIV PARIS SUD   (France)

^d PSL RESEARCH UNIVERSITY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTALLIZATION; DATA REDUCTION; DIELECTRIC MATERIALS; DIELECTRIC RELAXATION; SCANNING ELECTRON MICROSCOPY; VANADIUM; X RAY DIFFRACTION ANALYSIS;

ATOMIC LAYER DEPOSITION (ALD); CONDUCTIVITY SPECTRA; POLARON HOPPING; RELAXATION FREQUENCY;

THIN FILMS;

LITHIUM; TITANIUM; VANADIUM PENTOXIDE;

ARTICLE; CRYSTALLIZATION; DIELECTRIC CONSTANT; ELECTRIC BATTERY; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; ELECTRON NUCLEAR DOUBLE RESONANCE; FILM; SCANNING ELECTRON MICROSCOPY; TEMPERATURE DEPENDENCE; X RAY DIFFRACTION;

EID: 10844255554     PISSN: 09599428     EISSN: None     Source Type: Journal    
DOI: 10.1039/b410324f     Document Type: Article

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