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Volumn 48, Issue 3, 2013, Pages 1225-1230

Influence of oxygen partial pressure on structural, electrical, and optical properties of Al-doped ZnO film prepared by the ion beam co-sputtering method

(4) Chen, Yu Yun a Hsu, Jin Cherng a Lee, Chun Yi a Wang, Paul W b

a FU JEN CATHOLIC UNIVERSITY (Taiwan)

b BRADLEY UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORBED OXYGEN; AL-DOPED ZNO; ALUMINUM-DOPED ZINC OXIDE; AZO FILMS; CO-SPUTTERING METHOD; COSPUTTERING; DIFFRACTION PEAKS; GRAIN SIZE; HALL MEASUREMENTS; HIGH TRANSPARENCY; INFLUENCE OF OXYGEN; LOW RESISTIVITY; OXIDATION STATE; OXYGEN PARTIAL PRESSURE; ROOM TEMPERATURE; TWO-COMPONENT; VISIBLE LIGHT REGION; XRD;

CARRIER CONCENTRATION; ELECTRIC PROPERTIES; ION BEAMS; OPTICAL FILMS; OPTICAL PROPERTIES; OXYGEN; OXYGEN VACANCIES; PARTIAL PRESSURE; POSITIVE IONS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC;

FILM PREPARATION;

EID: 84871621163 PISSN: 00222461 EISSN: 15734803 Source Type: Journal
DOI: 10.1007/s10853-012-6863-7 Document Type: Article

Times cited : (30)

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