Properties of Al heavy-doped ZnO thin films by RF magnetron sputtering

Materials Research Bulletin

Volumn 43, Issue 6, 2008, Pages 1456-1462

  Li, L J ^a   Deng, H ^a   Dai, L P ^a   Chen, J J ^a   Yuan, Q L ^a   Li, Y ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

A. Thin films; B. Sputtering; C. Crystal structure; D. Optical properties

Indexed keywords

ALUMINUM; CONCENTRATION (PROCESS); CRYSTAL STRUCTURE; DOPING (ADDITIVES); MAGNETRON SPUTTERING; OPTICAL PROPERTIES; X RAY DIFFRACTION; ZINC OXIDE;

PEAKS SHIFT; SCANNING ELECTRON SPECTROMETERS;

THIN FILMS;

EID: 41349104867     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2007.06.042     Document Type: Article

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