Effect of annealing on the structural and luminescent properties of ZnO nanorod arrays grown at low temperature

Journal of Applied Physics

Volumn 109, Issue 10, 2011, Pages

  Shi, Shaobo ^a,b   Xu, Jianping ^c,d   Zhang, Xiaosong ^c   Li, Lan ^c  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

^b TIANJIN UNIVERSITY OF TECHNOLOGY AND EDUCATION   (China)

^c TIANJIN UNIVERSITY OF TECHNOLOGY   (China)

^d NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AFTER HIGH TEMPERATURE; ANNEALED SAMPLES; ANNEALING TEMPERATURES; AS-GROWN; BAND GAP ENERGY; CHEMICAL BATH DEPOSITION METHODS; DELOCALIZED ELECTRON; DEPLETION REGION; EMISSION BANDS; GLASS SUBSTRATES; GREEN EMISSION BANDS; INTERSTITIAL OXYGEN; LOW TEMPERATURES; LUMINESCENT PROPERTY; OPTIMAL EXCITATION; ORANGE-RED; PHOTOLUMINESCENCE SPECTRUM; POST-ANNEALING TEMPERATURE; RED SHIFT; ULTRAVIOLET EMISSION; VISIBLE EMISSIONS; WELL-ALIGNED; ZNO NANOROD; ZNO NANOROD ARRAYS;

ANNEALING; ELECTRON MOBILITY; EXCITATION ENERGY; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; X RAY DIFFRACTION; ZINC OXIDE;

NANORODS;

EID: 79958788172     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3586243     Document Type: Conference Paper

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