Effect of substrate and annealing on the structural and optical properties of ZnO:Al films

Journal of Physics and Chemistry of Solids

Volumn 71, Issue 3, 2010, Pages 346-350

  Ding, Jijun ^a   Chen, Haixia ^a   Zhao, Xinggang ^c   Ma, Shuyi ^a,b  

^a NORTHWEST NORMAL UNIVERSITY   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^c GANSU UNIVERSITY OF CHINESE MEDICINE   (China)

Author keywords

A. Semiconductors; A. Thin films; C. X ray diffraction; D. Optical properties

Indexed keywords

A. THIN FILMS; ANNEALING TEMPERATURES; C. X-RAY DIFFRACTION; CRYSTAL QUALITIES; FILM CRYSTALLINITY; FILM STOICHIOMETRY; GRAIN SIZE; PREFERRED ORIENTATIONS; RF MAGNETRON SPUTTERING TECHNIQUE; SI SUBSTRATES; STRUCTURAL AND OPTICAL PROPERTIES; VISIBLE EMISSIONS; ZNO; ZNO:AL FILMS; ZNO:AL THIN FILMS;

ALUMINUM; ANNEALING; DIFFRACTION; GLASS; MAGNETRON SPUTTERING; METALLIC FILMS; OPTICAL PROPERTIES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SILICON; STOICHIOMETRY; THIN FILMS; X RAY DIFFRACTION; ZINC OXIDE;

SUBSTRATES;

EID: 76749122354     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2009.12.088     Document Type: Article

References (25)

1. Marotti R.E., Giorgi P., Machado G., and Dalchiele E.A. Sol. Energy Mater. Sol. Cells 90 (2006) 2356
2. Khomchenkoa V.S., Kryshtabb T.G., and Savina A.K. Superlattices and Microstructures 42 (2007) 94
3. Norton D.P., Heo Y.W., Ivill M.P., Ip K., Pearton S.J., Chisholm M.F., and Steiner T. Mater. Today 7 (2004) 34
4. Lee H.W., Choi B.G., Shim K.B., and Oh Y.J. Ceram. J. Proc. Res. 6 (2005) 52
5. Ramamoorthy K., Sanjeeviraja C., Jayachandran M., Sankaranarayanan K., Pankaj M., and Kukreja L.M. Curr. Appl. Phys. 6 (2006) 103
6. Petrou P., Singh R., and Brodie D.E. Appl. Phys. Lett. 35 (1979) 930
7. Roth A.P., and Williams D.F. J. Appl. Phys. 52 (1981) 6685
8. Jiang X., Wong F.L., Fung M.K., and Lee S.T. Appl. Phys. Lett. 83 (2003) 1875
9. Nunes P., Fortunato E., and Martins R. Thin Solid Films 383 (2001) 277
10. Lu Y.F., Ni H.Q., Mai Z.H., and Ren Z.M. J. Appl. Phys. 88 (2000) 498
11. Wei X.Q., Man B.Y., Liu M., Xue C.S., Zhuang H.Z., and Yang C. Physica B 388 (2007) 145
12. Jimenez-Gonzalez A.E., Soto Urueta J.A., and Suarez-Parra R. J. Cryst. Growth 192 (1998) 430
13. Cai H., Shen H.L., Yin Y.G., Lu L.F., et al. J. Phys. Chem. Solids 70 (2009) 967
14. Ding J.J., Ma S.Y., Chen H.X., Shi X.F., Zhou T.T., and Mao L.M. Physica B 404 (2009) 2439
15. Zhang G.B., Shi C.S., Han Z.F., Shi J.Y., Fu Z.X., Kirm M., and Zimmerer G. Chin. Phys. Lett. 18 (2001) 441
16. Chen Y., Bagnall D.M., Koh H.J., Park K., Hiraga K., Zhu Z., and Yao T. J. Appl. Phys. 84 (1998) 3912
17. Sanon G., Rup R., and Mansingh A. Thin Solid Films 190 (1989) 287
18. Ong H.C., Zhu A.X.E., and Du G.T. Appl. Phys. Lett. 80 (2002) 941
19. Chang J.F., Lin W.C., and Hon M.H. Appl. Surf. Sci. 183 (2001) 18
20. Li L.J., Deng H., Dai L.P., Chen J.J., Yuan Q.L., and Li Y. Mater. Res. Bull. 43 (2008) 1456
21. Lin S.S., Huang J.L., and Šajgalik P.S. Surf. Coat. Technol. 191 (2005) 286
22. Xu P.S., Sun Y.M., Shi C.S., Xu F.Q., and Pan H.B. Nucl. Instrum. Meth. Phys. Res. B 199 (2003) 286
23. Kim Y.J., and Kim H.J. Mater. Lett. 41 (1999) 159
24. Ning Z.Y., and Li H.Q. Plasma Sci. Technol. 7 (2005) 2665
25. Tang Z.K., Wong G.K.L., and Yu P. Appl. Phys. Lett. 72 (1998) 3270