Room temperature deposition of Al-doped ZnO thin films on glass by RF magnetron sputtering under different Ar gas pressure

Journal of Alloys and Compounds

Volumn 509, Issue 2, 2011, Pages 421-425

  Kim, Deok Kyu ^a   Kim, Hong Bae ^b  

^a Chungbuk National University   (South Korea)

^b Chongju University   (South Korea)

Author keywords

Al doped ZnO; Ar gas pressure; Mobility; Oxygen vacancy; RF magnetron sputtering

Indexed keywords

AL-DOPED ZNO; AR GAS PRESSURE; AZO THIN FILMS; BOND FORMATION; ELECTRICAL PROPERTY; GLASS SUBSTRATES; LATTICE SCATTERING; MOBILITY; OXYGEN ATOM; RF-MAGNETRON SPUTTERING; ROOM TEMPERATURE; ROOM TEMPERATURE DEPOSITION;

ALUMINUM; ARGON; CARRIER MOBILITY; DEPOSITION; ELECTRIC PROPERTIES; GASES; GLASS; MAGNETRON SPUTTERING; OXYGEN; SUBSTRATES; THIN FILMS; VACANCIES; VAPOR DEPOSITION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

OXYGEN VACANCIES;

EID: 78149285466     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2010.09.047     Document Type: Article

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