Rapid thermal annealing properties of ZnO films grown using methanol as oxidant

Journal of Physics D: Applied Physics

Volumn 40, Issue 19, 2007, Pages 6010-6013

  Zhang, P F ^a   Liu, X L ^a   Wei, H Y ^a   Fan, H B ^a   Liang, Z M ^a   Jin, P ^a   Yang, S Y ^a   Jiao, C M ^a   Zhu, Q S ^a   Wang, Z G ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FILM GROWTH; HALL MOBILITY; OXIDANTS; PHOTOLUMINESCENCE SPECTROSCOPY; RAPID THERMAL ANNEALING; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

ATMOSPHERE OXYGEN; HALL MEASUREMENT; OPTICAL QUALITY; PHOTOLUMINESCENCE SPECTRA;

THIN FILMS;

EID: 34748819591     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/19/035     Document Type: Article

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