Dependence of resistivity on structure and composition of AZO films fabricated by ion beam co-sputtering deposition

Applied Surface Science

Volumn 257, Issue 8, 2011, Pages 3446-3450

  Chen, Yu Yun ^a   Hsu, Jin Cherng ^a   Wang, Paul W ^b   Pai, Yao Wei ^a   Wu, Chih Yuan ^a   Lin, Yung Hsin ^a  

^a FU JEN CATHOLIC UNIVERSITY   (Taiwan)

^b BRADLEY UNIVERSITY   (United States)

Author keywords

Aluminum doped zinc oxide; AZO; Ion beam co sputtering deposition; Resistivity; Thermal stability; XRD

Indexed keywords

ALUMINUM OXIDE; CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; FABRICATION; II-VI SEMICONDUCTORS; ION BEAMS; IONS; OPTICAL FILMS; SPECTROMETERS; SPUTTER DEPOSITION; THERMODYNAMIC STABILITY; TRANSPARENT CONDUCTING OXIDES; ZINC OXIDE;

ALUMINUM CONCENTRATION; ALUMINUM-DOPED ZINC OXIDE; CO-SPUTTERING DEPOSITION; ENERGY DISPERSIVE SPECTROMETERS; FREE CARRIER CONCENTRATION; LARGEST GRAIN SIZES; SAMPLE TEMPERATURE; X RAY DIFFRACTOMETERS;

ALUMINUM COATINGS;

EID: 78651351525     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.11.043     Document Type: Article

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