Radiative inter-valley transitions as a dominant emission mechanism in AlGaN/GaN high electron mobility transistors

Semiconductor Science and Technology

Volumn 27, Issue 12, 2012, Pages

  Gutle F ^a   Polyakov, V M ^a   Baeumler, M ^a   Benkhelifa, F ^a   Muller S ^a   Dammann, M ^a   Casar M ^a   Quay, R ^a   Mikulla, M ^a   Wagner, J ^a   Ambacher, O ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; CONDUCTION BAND ELECTRONS; DEVICE SIMULATIONS; DRAIN BIAS; DRAIN VOLTAGE; ELECTRIC FIELD STRENGTH; ELECTROLUMINESCENCE EMISSION; EMISSION MECHANISM; GATE FIELD; INTENSITY PROFILES;

ELECTRIC FIELDS; ELECTROLUMINESCENCE; ELECTRON TRANSITIONS; GALLIUM NITRIDE; LANDFORMS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84870270755     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/27/12/125003     Document Type: Article

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