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Volumn 106, Issue 2, 2009, Pages

Intrinsically limited mobility of the two-dimensional electron gas in gated AlGaN/GaN and AlGaN/AlN/GaN heterostructures

(6) Polyakov, V M a Schwierz, F a Cimalla, I a Kittler, M a Lubbers B a Schober, A a

a ILMENAU UNIVERSITY OF TECHNOLOGY (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/ALN/GAN; ALGAN/GAN; ALLOY SCATTERING; ALN BARRIERS; BULK MOBILITY; BULK VALUE; ELECTRON SHEET DENSITY; HETEROSTRUCTURES; LOW FIELD MOBILITY; MONTE CARLO TRANSPORT SIMULATIONS; ROOM TEMPERATURE; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

CRYSTALS; ELECTRIC CONDUCTIVITY OF GASES; ELECTRON GAS; ELECTRONS; GALLIUM NITRIDE; PHONONS; QUANTUM CONFINEMENT; SEMICONDUCTING GALLIUM; TRANSPORT PROPERTIES; TWO DIMENSIONAL;

TWO DIMENSIONAL ELECTRON GAS;

EID: 68249147638 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3174441 Document Type: Article

Times cited : (37)

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