Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers

Applied Physics Letters

Volumn 100, Issue 11, 2012, Pages

  Hodges, C ^a   Killat, N ^a   Kaun, S W ^b   Wong, M H ^b   Gao, F ^c   Palacios, T ^c   Mishra, U K ^b   Speck, J S ^b   Wolverson, D ^d   Kuball, M ^a  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

^b University of California   (United States)

^c Department of Electrical Engineering and Computer Science   (United States)

^d University of Bath   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; DEGRADATION MECHANISM; DEVICE CHANNEL; DEVICE LAYERS; GATE LEAKAGES; GATE-LEAKAGE CURRENT; HOT SPOT; HOTSPOTS; NON-RADIATIVE RECOMBINATIONS; OPTICAL INVESTIGATION; PINCHOFF;

CHARGE CARRIERS; DEGRADATION; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS;

ELECTROLUMINESCENCE;

EID: 84859977233     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3693427     Document Type: Article

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