Evidence for impact ionisation in AlGaN/GaN HEMTs with InGaN back-barrier

Electronics Letters

Volumn 47, Issue 6, 2011, Pages 405-406

  Killat, N ^a   Tapajna M ^a   Faqir, M ^a   Palacios, T ^b   Kuball, M ^a  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

^b Department of Electrical Engineering and Computer Science   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMTS; DRIFT-DIFFUSION SIMULATION; ELECTROLUMINESCENCE SPECTROSCOPY; GATE-LEAKAGE CURRENT; HOLE CURRENT; HOLE GENERATION; IONISATION; OPTICAL TECHNIQUE; SURFACE LEAKAGE CURRENTS;

ELECTROLUMINESCENCE; GALLIUM NITRIDE; LEAKAGE CURRENTS;

IMPACT IONIZATION;

EID: 79957542667     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2010.7540     Document Type: Article

References (9)

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