Determination of satellite valley position in GaN emitter from photoexcited field emission investigations

Journal of Applied Physics

Volumn 109, Issue 2, 2011, Pages

  Semenenko, M ^a   Yilmazoglu, O ^b   Hartnagel, H L ^b   Pavlidis, D ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON PLASMAS; ELECTRON FIELD EMISSION PROPERTIES; FOWLER-NORDHEIM; GAN SUBSTRATE; NANO-METER-SCALE;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRODES; ELECTRON AFFINITY; ELECTRON MOBILITY; FIELD EMISSION; FIELD EMISSION CATHODES; GALLIUM NITRIDE; LANDFORMS; LIGHT SOURCES;

GALLIUM ALLOYS;

EID: 79551664644     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3533770     Document Type: Article

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