Investigation of leakage current of AlGaN/GaN HEMTs under pinch-off condition by electroluminescence microscopy

Journal of Electronic Materials

Volumn 39, Issue 6, 2010, Pages 756-760

  Baeumler, Martina ^a   Gütle, Frank ^a   Polyakov, Vladimir ^a   Cäsar, Markus ^a   Dammann, Michael ^a   Konstanzer, Helmer ^a   Pletschen, Wilfried ^a   Bronner, Wolfgang ^a   Quay, Rüdiger ^a   Waltereit, Patrick ^a   Mikulla, Michael ^a   Ambacher, Oliver ^a   Bourgeois, Franck ^b   Behtash, Reza ^b   Riepe, Klaus J ^b   Van Der Wel, Paul J ^c   Klappe, Jos ^c   Rödle, Thomas ^c  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b United Monolithic Semiconductors GmbH   (Germany)

^c NXP SEMICONDUCTORS   (Netherlands)

Author keywords

AlGaN GaN HEMT; Electroluminescence microscopy; Leakage current

Indexed keywords

ACCELERATED AGING; ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; DRAIN BIAS; ELECTRICAL FIELD; ELECTROLUMINESCENCE MICROSCOPY; FOUR-ORDER; GAN CAP; GATE WIDTHS; ON-WAFER; PINCHOFF; SOURCE-DRAIN;

DRAIN CURRENT; ELECTRIC FIELDS; ELECTROLUMINESCENCE; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS;

LEAKAGE CURRENTS;

EID: 77954621152     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-010-1120-9     Document Type: Article

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