CMOS compatible polycrystalline silicon-germanium based pressure sensors

Sensors and Actuators, A: Physical

Volumn 188, Issue , 2012, Pages 9-18

  Gonzalez, Pilar ^a,b   Guo, Bin ^a   Rakowski, Michal ^a   De Meyer, Kristin ^a,b   Witvrouw, Ann ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Capacitive; CMOS; MEMS monolithic integration; Piezoresistivity; Poly SiGe; Pressure sensor

Indexed keywords

CAPACITIVE; CMOS; MONOLITHIC INTEGRATION; PIEZORESISTIVITY; POLY-SIGE;

ANNEALING; CMOS INTEGRATED CIRCUITS; OPTIMIZATION; PARTIAL PRESSURE SENSORS; POLYSILICON; PRESSURE SENSORS; SILICON ALLOYS;

METAL ANALYSIS;

EID: 84870061535     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2011.12.018     Document Type: Conference Paper

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