A CMOS compatible polycrystalline silicon-germanium based piezoresistive pressure sensor

2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

Volumn , Issue , 2011, Pages 1076-1079

  Gonzalez, P ^a,b   Guo, B ^a   Severi, S ^a   De Meyer, K ^a,b   Witvrouw, A ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

piezoresistivity; Poly SiGe; pressure sensor

Indexed keywords

ANNEALING TIME; CMOS COMPATIBLE; DESIGN OPTIMIZATION; GAUGE FACTORS; LOW PROCESSING TEMPERATURE; PIEZO-RESISTIVE; PIEZORESISTIVE PRESSURE SENSORS; PIEZORESISTIVE PROPERTIES; PIEZORESISTIVITY; PIEZORESISTOR; POLY-SIGE; POLYCRYSTALLINE; SILICON GERMANIUM;

ACTUATORS; GERMANIUM; MICROSYSTEMS; OPTIMIZATION; POLYSILICON; PRESSURE SENSORS; PROCESSING; SILICON ALLOYS;

SOLID-STATE SENSORS;

EID: 80052129082     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/TRANSDUCERS.2011.5969178     Document Type: Conference Paper

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