Wafer level characterization of the sacrificial HDP oxide lateral etching by anhydrous vapor HF with ethanol vapor for SiGe MEMS structures

ECS Transactions

Volumn 33, Issue 8, 2010, Pages 295-307

  Cui, H ^a   Van Hoof, R ^a   Severi, S ^a   Witvrouw, A ^a   Knoops, A ^a   Delande, T ^a   Pancken, J ^a   Claes, M ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN OF EXPERIMENTS; ETCHING; ETHANOL; SCANNING ELECTRON MICROSCOPY; SI-GE ALLOYS;

AUTOMATED TECHNIQUES; CRITICAL DIMENSION SCANNING ELECTRON MICROSCOPIES; HIGH DENSITY PLASMAS; MANUAL INSPECTION; MICRO ELECTROMECHANICAL SYSTEM (MEMS); PROCESS CONDITION; PROCESS OF RECORDS; STATISTICAL PROCESS CONTROLS (SPC);

STATISTICAL PROCESS CONTROL;

EID: 79952685041     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3484133     Document Type: Conference Paper

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