Evaluation of the piezoresistive and electrical properties of polycrystalline silicon-germanium for MEMS sensor applications

Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

Volumn , Issue , 2010, Pages 580-583

  Gonzalez, Pilar ^a,b   Haspeslagh, Luc ^a   De Meyer, Kristin ^a,b   Witvrouw, Ann ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BORON-DOPED; ELECTRICAL PROPERTY; FINITE ELEMENT SIMULATIONS; GAUGE FACTORS; MEMS SENSORS; PIEZO-RESISTIVE; PIEZORESISTIVE PROPERTIES; PIEZORESISTIVE SENSORS; POLY-CRYSTALLINE SILICON; POLY-SIGE; TEMPERATURE COEFFICIENT OF RESISTANCE;

BORON; DOPING (ADDITIVES); GERMANIUM; MECHANICAL ENGINEERING; MECHANICS; POLYSILICON; REACTIVE ION ETCHING; SENSORS;

ELECTRIC PROPERTIES;

EID: 77952768882     PISSN: 10846999     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MEMSYS.2010.5442437     Document Type: Conference Paper

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