Piezoresistivity and electrical Properties of poly-SiGe deposited at CMOS-compatible Temperatures

2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

Volumn , Issue , 2010, Pages 476-479

  Gonzaleza, Pilar ^a,b   Haspeslagh, Luc ^a   Severi, Simone ^a   De Meyera, Kristin ^a,b   Witvrouw, Ann ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BORON CONTENT; CMOS COMPATIBLE; EFFECT OF DOPING; ELECTRICAL PROPERTY; GAUGE FACTORS; PIEZO-RESISTIVE; PIEZORESISTIVITY; POLY-SIGE; SENSING LAYERS;

BORON; BORON COMPOUNDS; POLYSILICON; SILICON ALLOYS; SOLID STATE DEVICES;

ELECTRIC PROPERTIES;

EID: 78649963275     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2010.5618171     Document Type: Conference Paper

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