Practical model for electrical properties of highly doped p-type polysilicon

1998 4th International Conference on Actual Problems of Electronic Instrument Engineering, APEIE 1998 - Proceedings

Volumn 1998-September, Issue , 1998, Pages 27-29

  Spoutai, S V ^a,b  

^a NOVOSIBIRSK STATE TECHNICAL UNIVERSITY   (Russian Federation)

^b University of Ulsan   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SEMICONDUCTORS; ELECTRONICS INDUSTRY; GAGES; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; MICROCRYSTALLINE SILICON; MONOCRYSTALLINE SILICON; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR DOPING;

AVERAGE GRAIN SIZE; DOPANT CONCENTRATIONS; DOPING CONCENTRATION; HIGH DOPING LEVEL; MICROCRYSTALLINE SILICON FILMS; POLY-CRYSTALLINE SEMICONDUCTORS; PRACTICAL MODEL; TEMPERATURE COEFFICIENT;

POLYSILICON;

EID: 84927152839     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APEIE.1998.768900     Document Type: Conference Paper

References (8)

1. Seto S Y W, 1975 J Appl. Phys. 46 5247-5254
2. Baccarani G, Ricco B and Spadini G 1978 J. Appl. Phys. 49 5565-5570
3. Lu N C C, Gerzberg L, Lu C: Y and Meindl J D 1981 IEEE Trans. Zectron.Device 258 818-831
4. Spoutai S V 1995 Cand of Scz.Dissertation NSTU Novosibirsk Russia p 255 (in Russian)
5. Spoutai S V and Gridchin V A 1397 Proc. Int. Symp. on Science and TechnoZogy, Ulsan, (university of Ulsan, Rep. of Korea) 194-199
6. Germer W 1985 Sensors and Actuators 7 13 5-142
7. Sarina M P 1992 Cand of Sci.Dzssertatzon NSTU Novosibirsk Russia p 1% (in Russian)
8. Mosser V, Suski J, Goss J and Obermeier E 199 1 Sensors and Actuators A. 28 113-132