SCOPUS 정보 검색 플랫폼

Volumn 37, Issue 12, 2012, Pages 1138-1147

Epitaxial graphene on silicon carbide: Introduction to structured graphene

(8) Ruan, Ming a Hu, Yike a Guo, Zelei a Dong, Rui a Palmer, James a Hankinson, John a Berger, Claire a,b De Heer, Walt A a

a GEORGIA INSTITUTE OF TECHNOLOGY (United States)

b LABORATOIRE DE CRISTALLOGRAPHIE (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC MATERIALS; EPITAXIAL GRAPHENE; NANO SCALE; POST ANNEALING; PROOF OF CONCEPT; SILICON ELECTRONICS; SINGLE CRYSTAL SILICON; SINGLE-CRYSTAL SUBSTRATES;

EPITAXIAL GROWTH; NANOTECHNOLOGY; SILICON CARBIDE; TRANSPORT PROPERTIES;

GRAPHENE;

EID: 84870031288 PISSN: 08837694 EISSN: None Source Type: Journal
DOI: 10.1557/mrs.2012.231 Document Type: Article

Times cited : (70)

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