Half-Terahertz operation of SiGe HBTs

IEEE Electron Device Letters

Volumn 27, Issue 7, 2006, Pages 567-569

  Krithivasan, Ramkumar ^a   Lu, Yuan ^a   Cressler, John D ^a   Rieh, Jae Sung ^b   Khater, Marwan H ^c   Ahlgren, David ^c   Freeman, Greg ^c  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Korea University   (South Korea)

^c IBM MICROELECTRONICS   (United States)

Author keywords

Cryogenic temperatures; Frequency response; Heterojunction bipolar transistor (HBT); SiGe HBT; Silicon germanium (SiGe); Terahertz

Indexed keywords

CRYOGENICS; ELECTRIC BREAKDOWN; FREQUENCY RESPONSE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS;

CRYOGENIC TEMPERATURES; CUTOFF FREQUENCY; TERAHERTZ;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 33745638348     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.876298     Document Type: Article

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