Structured epitaxial graphene growth on SiC by selective graphitization using a patterned AlN cap

Applied Physics Letters

Volumn 96, Issue 8, 2010, Pages

  Rubio Roy, Miguel ^a   Zaman, Farhana ^b   Hu, Yike ^a   Berger, Claire ^a   Moseley, Michael W ^b   Meindl, James D ^b   De Heer, Walt A ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALUMINUM NITRIDE LAYER; ARGON PRESSURE; DEVICE STRUCTURES; ELECTRONIC QUALITY; EPITAXIAL GRAPHENE; FINE TUNING; GRAPHENE GROWTH; GRAPHITIZATION TEMPERATURE; HALL BARS; LITHOGRAPHIC PATTERNING; SCANNING RAMAN SPECTROSCOPY; TRANSPORT MEASUREMENTS;

ALUMINUM NITRIDE; ARGON; GALVANOMAGNETIC EFFECTS; GRAPHENE; GRAPHITIZATION; HALL MOBILITY; NITRIDES; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

GRAPHITE;

EID: 77749288949     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3334683     Document Type: Article

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