The structure of graphene grown on the SiC (0 0 0 1̄) surface

Journal of Physics D: Applied Physics

Volumn 45, Issue 15, 2012, Pages

  Hicks, J ^a   Shepperd, K ^a   Wang, F ^a   Conrad, E H ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GRAPHENE GROWTH; GROWTH PROCESS; INTERFACE STRUCTURES;

ELECTRON MOBILITY; ELECTRONIC PROPERTIES; GRAPHENE; INTERFACES (MATERIALS); SILICON CARBIDE;

SURFACES;

EID: 84859258184     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/45/15/154002     Document Type: Article

References (56)

1. Berger C et al 2004 J. Phys. Chem. B 108 19912
2. Berger C et al 2006 Science 312 1191
3. Kedzierski J, Hsu P-L, Healey P, Wyatt P, Keast C, Sprinkle M, Berger C and de Heer W 2008 IEEE Trans. Electron Devices 55 2078
4. Moon J S et al 2000 IEEE Electron Device Lett. 30 650
5. Liao L, Bai J W, Cheng R, Lin Y C, Jiang S, Huang Y and Duan X F 2010 Nano Lett. 10 1917
6. Lin Y M, Dimitrakopoulos C, Jenkins K A, Farmer D B, Chiu H Y, Grill A and Avouris P 2010 Science 327 662
7. Nakada K, Fujita M, Dresselhaus G and Dresselhaus M S 1996 Phys. Rev. B 54 17954
8. Son Y-W, Cohen M L and Louie S G 2006 Phys. Rev. Lett. 97 216803
9. Han M Y, Brant J C and Kim P 2010 Phys. Rev. Lett. 104 056801
10. Rutter G M, Guisinger N P, Crain J N, Jarvis E A A, Stiles M D, Li T, First P N and Stroscio J A 2007 Phys. Rev. B 76 235416-1
11. Norimatsu W and Kusunoki M 2010 Physica E 42 691
12. Coletti C, Emtsev K V, Zakharov A A, Ouisse T, Chaussende D and Starke U 2011 Appl. Phys. Lett. 99 081904
13. Hass J, Varchon F, Millán-Otoya J E, Sprinkle M, Sharma N, de Heer W A, Berger C, First P N, Magaud L and Conrad E H 2008 Phys. Rev. Lett. 100 125504
14. Hass J, de Heer W A and Conrad E H 2008 J. Phys.: Condens. Matter 20 323202
15. de Heer W A et al 2007 Solid State Commun. 143 92
16. de Heer W A et al 2010 J. Phys. D: Appl. Phys. 43 374007
17. Seyller Th, Bostwick A, Emtsev K V, Horn K, Ley L, McChesney J L, Ohta T, Riley J D, Rotenberg E and Speck F 2008 Phys. Status Solidi b 245 1436
18. de Heer W A, Berger C, Ruan M, Sprinkle M, Li X, Hu Y, Zhang B, Hankinson J and Conrad E H 2011 Proc. Natl Acad. Sci. 108 16900
19. Emtsev K V et al 2009 Nature Mater. 8 203
20. Forbeaux I, Themlin J-M, Charrier A, Thibaudau F and Debever J-M 2000 Appl. Surf. Sci. 162163 406
21. Hiebel F, Mallet P, Varchon F, Magaud L and Veuillen J-Y 2008 Phys. Rev. B 78 153412
22. Emtsev K V, Speck F, Seyller Th, Ley L and Riley J D 2008 Phys. Rev. B 77 155303
23. Johansson L I, Watcharinyanon S, Zakharov A A, Iakimov T, Yakimova R and Virojanadara C 2011 Phys. Rev. B 84 125405
24. Sprinkle M W 2010 PhD Thesis Georgia Institute of Technology
25. Hass J, Feng R, Millán-Otoya J E, Li X, Sprinkle M, First P N, Berger C, de Heer W A and Conrad E H 2007 Phys. Rev. B 75 214109
26. Polman K, Vonk V, Van der Linden H, Wang F, Conrad E H and Vlieg E unpublished
27. Mathieu C, Barrett N, Rault J, Zhang B, de Heer W A, Berger C, Conrad E H and Renault O 2011 Phys. Rev. B 83 235436
28. Hass J, Millán-Otoya J E, First P N and Conrad E H 2008 Phys. Rev. B 78 205424
29. Riedl C, Coletti C, Iwasaki T, Zakharov A A and Starke U 2009 Phys. Rev. Lett. 103 246804
30. Speck F, Ostler M, Röhrl J, Jobst J, Waldmann D, Hundhausen M, Ley L, Weber H B and Seyller Th 2010 Mater. Sci. Forum 645648 629
31. de Heer W A 2011 private communication
32. Starke U and Riedl C 2009 J. Phys.: Condens. Matter 21 134016
33. Johansson L I, Owman F and M\rartensson P 1996 Phys. Rev. B 53 13793
34. Johansson L I, Glans P-A and Hellgren N 1998 Surf. Sci. 405 288
35. Pate B B, Oshima M, Silberman J A, Rossi G, Lindau I and Spice W E 1984 J. Vac. Sci. Technol. A 2 957
36. Ohta T, Bostwick A, McChesney J L, Seller T, Horn K and Rotenberg E 2007 Phys. Rev. Lett. 98 206802
37. Guinea F 2007 Phys. Rev. B 75 235433
38. Sprinkle M et al 2010 J. Phys. D: Appl. Phys. 43 374006
39. Sprinkle M et al 2009 Phys. Rev. Lett. 103 226803
40. Franklin R E 1951 Acta Crystallogr. 4 253
41. Caņado L G, Pimenta M A, Saito R, Jorio A, Ladeira L O, Grüeneis A, Souza-Filho A G, Dresselhaus G and Dresselhaus M S 2002 Phys. Rev. B 66 035415
42. Hutcheon J 1970 Modern Aspects of Graphite Technology ed L Blackman (London: Academic)
43. Hicks J et al 2011 Phys. Rev. B 83 205403
44. Goknur Cambaza Z, Yushinb G, Osswalda S, Mochalina V and Gogotsia Y 2008 Carbon 46 841
45. Miller D L, Kubista K D, Rutter G M, Ruan M, de Heer W A, Kindermann M, First P N and Stroscio J A 2010 Nature Phys. 6 811
46. Miller D L, Kubista K D, Rutter G M, Ruan M, de Heer W A, First P N and Stroscio J A 2009 Science 324 924
47. Orlita M et al 2008 Phys. Rev. Lett. 101 267601
48. Siegel D A, Park C-H, Hwang C, Deslippe J, Fedorov A V, Louie S G and Lanzara A 2011 Proc. Natl Acad. Sci. 108 11365
49. Xian L and Chou M Y 2011 private communication
50. Miura Y, Kasai H, Dino W A, Nakanishi H and Sugimoto T 2003 J. Phys. Soc. Japan 72 995
51. Wang F et al 2011 arXiv:1111.2946
52. Kusunoki M, Suzuki T, Kaneko K and Ito M 1999 Phil. Mag. Lett. 79 153
53. Ruan M et al unpublished
54. Lu C Y, Cooper J A, Tsuji T, Chung G, Williams J R, McDonald K and Feldman L C 2003 IEEE Trans. Electron Devices 50 1582
55. Hicks J, Shepperd K, Tejeda A, Taleb-Ibrahimi A, Bertran F, Le Fèvre P, Palmer J, de Heer W A, Berger C and Conrad E H unpublished
56. Gaskill D K, Hite J K, Culbertson J C, Jernigan G G, Tedesco J L, Nyakiti L O, Wheeler V D, Myers-Ward R L, Garces N Y and Eddy C R Jr 2011 Mater. Sci. Forum 679680 789