Nanoepitaxy of GaAs on a Si(001) substrate using a round-hole nanopatterned SiO2 mask

Nanotechnology

Volumn 23, Issue 49, 2012, Pages

  Hsu, Chao Wei ^a   Chen, Yung Feng ^a   Su, Yan Kuin ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING PIT DENSITIES; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; GAAS; HALL MEASUREMENTS; MATERIAL QUALITY; PHOTOLUMINESCENCE SPECTRUM; SI (001) SUBSTRATE; SI SUBSTRATES; THREADING DISLOCATION; X-RAY DIFFRACTION STUDIES;

GALLIUM ARSENIDE; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SILICON; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VAPORS; X RAY DIFFRACTION;

SEMICONDUCTING GALLIUM;

GALLIUM; GALLIUM ARSENIDE; NANOMATERIAL; ORGANOARSENIC DERIVATIVE; SILICON; SILICON DIOXIDE;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; MOLECULAR IMPRINTING; NANOTECHNOLOGY; PARTICLE SIZE; POROSITY; SURFACE PROPERTY; ULTRASTRUCTURE;

ARSENICALS; CRYSTALLIZATION; GALLIUM; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; MOLECULAR IMPRINTING; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; POROSITY; SILICON; SILICON DIOXIDE; SURFACE PROPERTIES;

EID: 84870024815     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/49/495306     Document Type: Article

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