Theory of strain relaxation for epitaxial layers grown on substrate of a finite dimension

Physical Review Letters

Volumn 85, Issue 4, 2000, Pages 784-787

  Huang, F Y ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; MATHEMATICAL MODELS; NUMERICAL ANALYSIS; SILICON ALLOYS; STRAIN; STRESS RELAXATION; THICKNESS MEASUREMENT;

DILUTION; EPITAXIAL LAYERS; STRAIN RELAXATION; STRAIN TRANSFER;

SUBSTRATES;

EID: 0034228126     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.85.784     Document Type: Article

References (13)

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