Selective area metalorganic vapor-phase epitaxy of gallium arsenide on silicon

Journal of Crystal Growth

Volumn 310, Issue 3, 2008, Pages 562-569

  Cheng, S F ^a   Gao, L ^a   Woo, R L ^a   Pangan, A ^b   Malouf, G ^b   Goorsky, M S ^b   Wang, K L ^a   Hicks, R F ^a,b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Engineering IV   (United States)

Author keywords

A3. Metalorganic chemical vapor deposition; A3. Selective epitaxy; B2. III V Materials

Indexed keywords

EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; POLYCRYSTALLINE MATERIALS; SILICON; X RAY DIFFRACTION;

NUCLEATION TEMPERATURE; PHOTOLUMINESCENCE PEAK POSITION; SELECTIVE AREA METALORGANIC VAPOR-PHASE EPITAXY; SILICON SUBSTRATES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 37849013364     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.11.056     Document Type: Article

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