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Journal of Applied Physics

Volumn 82, Issue 10, 1997, Pages 5103-5106

Photoluminescence characterization of biaxial tensile strained GaAs

(6) Kim, Ki Soo a Yang, Gye Mo a Shim, Hyun Wook a Lim, Kee Young a,b Suh, Eun Kyung a,b Lee, Hyung Jae a,b

a Chonbuk National University (South Korea)

b Department of Physics ^* (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR ENERGY; BIAXIAL TENSILE; BIAXIAL TENSILE STRAIN; EXCITON LINES; GAAS; HETEROEPITAXIAL; LOW TEMPERATURE PHOTOLUMINESCENCE; METALORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE CHARACTERIZATION; PHOTOLUMINESCENCE SPECTRUM; SI (001) SUBSTRATE; TETRAGONAL DISTORTION; THERMAL EXPANSION COEFFICIENTS; TWO-BAND MODEL;

BINDING ENERGY; GALLIUM ALLOYS; GALLIUM ARSENIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; THERMAL EXPANSION;

TENSILE STRAIN;

EID: 33845285351 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.366311 Document Type: Article

Times cited : (11)

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