Defect reduction of GaAs epitaxy on Si (001) using selective aspect ratio trapping

Applied Physics Letters

Volumn 91, Issue 2, 2007, Pages

  Li, J Z ^a   Bai, J ^a   Park, J S ^a   Adekore, B ^a   Fox, K ^a   Carroll, M ^a   Lochtefeld, A ^a   Shellenbarger, Z ^b  

^a AmberWave Systems Corporation   (United States)

^b SARNOFF CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CRYSTAL DEFECTS; INTEGRATED OPTOELECTRONICS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

DEFECT REDUCTION; MATERIAL QUALITY; ROOM TEMPERATURE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 34547227667     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2756165     Document Type: Article

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