Microstructural improvements of InP on GaAs (001) grown by molecular beam epitaxy by in situ hydrogenation and postgrowth annealing

Applied Physics Letters

Volumn 94, Issue 4, 2009, Pages

  Morales, F M ^a   Garcia R ^a   Molina, S I ^a   Aouni, A ^b   Postigo, P A ^c   Fonstad, C G ^d  

^a UNIVERSITY OF CÁDIZ   (Spain)

^b ABDELMALEK ESSAADI UNIVERSITY   (Morocco)

^c INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

^d USA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; GALLIUM ALLOYS; GROWTH (MATERIALS); HIGH RESOLUTION ELECTRON MICROSCOPY; HYDROGENATION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES; STACKING FAULTS;

GAAS; GAAS(001); HETEROEPITAXIAL; HIGH QUALITIES; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPIES; IN-SITU HYDROGENATIONS; INP; INP EPILAYERS; MICRO-STRUCTURAL; PLANAR DEFECTS; POST-GROWTH ANNEALING; STRAIN-RELAXED; THERMAL-ANNEALING; THREADING DISLOCATIONS; TWO-STEP GROWTHS;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 59349102530     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3077610     Document Type: Article

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