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Applied Physics Letters

Volumn 101, Issue 20, 2012, Pages

Indium incorporation efficiency and critical layer thickness of (202̄1) InGaN layers on GaN

(6) Ploch, Simon a Wernicke, Tim a Frentrup, Martin a Pristovsek, Markus a Weyers, Markus b Kneissl, Michael a,b

a TECHNISCHE UNIVERSITÄT BERLIN (Germany)

b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL LAYER THICKNESS; DISLOCATION FORMATION; INDIUM CONTENT; RMS ROUGHNESS;

GALLIUM NITRIDE; INDIUM; METALLORGANIC VAPOR PHASE EPITAXY;

EFFICIENCY;

EID: 84870021490 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4767336 Document Type: Article

Times cited : (23)

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