Surface structure of GaN(0001) in the chemical vapor deposition environment

Physical Review Letters

Volumn 83, Issue 4, 1999, Pages 741-744

  Munkholm, A ^a   Stephenson, G B ^a   Eastman, J A ^a   Thompson, C ^a,b   Fini, P ^c   Speck, J S ^c   Auciello, O ^a   Fuoss, P H ^d   Den Baars, S P ^c  

^a ARGONNE NATIONAL LABORATORY   (United States)

^b NORTHERN ILLINOIS UNIVERSITY   (United States)

^c University of California at Santa Barbara   (United States)

^d AT AND T LABS RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 4244110662     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.83.741     Document Type: Article

References (27)

1. S. Nakamura, T. Mukai, and M. Senoh, Appl. Phys. Lett., 64, 1687 (1994).
2. S. Nakamura et al., Jpn. J. Appl. Phys., 35, L74 (1996).
3. U. K. Mishra et al., Physics of Semiconductor Devices, V. Kumar and S. K. Agarwal (India Norosa, Delhi, 1998), Vol. II, p. 878.
4. A. R. Smith et al., Phys. Rev. Lett., 79, 3934 (1997)
5. A. R. Smith et al., J. Vac. Sci. Technol. B, 16, 2242 (1998).
6. P. Hacke et al., Appl. Phys. Lett., 69, 2507 (1996)
7. X.-Q. Shen et al., Jpn. J. Appl. Phys., 37, L637 (1998).
8. A. R. Smith et al., Appl. Phys. Lett., 72, 2114 (1998).
9. J. E. Northrup, R. Di Felice, and J. Neugebauer, Phys. Rev. B, 55, 13878 (1997)
10. K. Rapcewicz, M. B. Nardelli, and J. Bernholc, Phys. Rev. B, 56, R12725 (1997)
11. J. Fritsch et al., Phys. Rev. B, 57, 15360 (1998).
12. J. Neugebauer et al., Phys. Rev. Lett., 80, 3097 (1998)
13. T. Zywietz, J. Neugebauer, and M. Scheffler, Appl. Phys. Lett., 73, 487 (1998).
14. X. H. Wu et al., Jpn. J. Appl. Phys., 35, L1648 (1996).
15. J. L. Rouviere et al., Appl. Phys. Lett., 73, 668 (1998)
16. E. S. Hellman, MRS Internet J. Nitride Semicond. Res., 3, article 11 (1998).
17. S. Brennan et al., Nucl. Instrum. Methods Phys. Res., Sect. A, 291, 86 (1990)
18. G. B. Stephenson et al., MRS Bull., 24(1), 21 (1999).
19. O. Brandt, H. Yang, and K. H. Ploog, Phys. Rev. B, 54, 4432 (1996).
20. R. J. Hamers, Scanning Tunneling Microscropy I, H.-J. Güntherodt and R. Wiesendanger (Springer-Verlag, Berlin, 1992).
21. E. Kaxiras et al., Phys. Rev. Lett., 56, 2819 (1986).
22. International Tables for X-ray Crystallography, J. S. Kaspar and K. Lonsdale (Kynoch, Birmingham, 1967), Vol. II, pp. 326–328.
23. X. Xiong and S. C. Moss, J. Appl. Phys., 82, 2308 (1997).
24. F. J. Lamelas et al., Phys. Rev. B, 49, 1957 (1994).
25. D. D. Koleske et al., J. Appl. Phys., 84, 1998 (1998).
26. A. Zangwill, Physics at Surfaces (Cambridge University, Cambridge, England, 1988), p. 105.
27. G. B. Stephenson et al., Appl. Phys. Lett., 74, 3326 (1999).