Influence of MOVPE growth temperature on the structural and optical properties of InGaN MQW laser diodes

Journal of Crystal Growth

Volumn 310, Issue 21, 2008, Pages 4525-4530

  Hoffmann, V ^a   Knauer, A ^a   Brunner, F ^a   Netzel, C ^a   Zeimer, U ^a   Einfeldt, S ^a   Weyers, M ^a   Trankle G ^a   Karaliunas, J M ^b   Kazlauskas, K ^b   Jursenas, S ^b   Jahn, U ^c   van Look, J R ^d   Kneissl, M ^a,d  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b VILNIUS UNIVERSITY   (Lithuania)

^c PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^d TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

A1. Characterization; A1. Interfaces; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials; B3. Laser diodes

Indexed keywords

CONCENTRATION (PROCESS); CORUNDUM; CRYSTAL GROWTH; GROWTH TEMPERATURE; INDIUM; LADDER NETWORKS; LASERS; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL MATERIALS; OPTICAL PROPERTIES; OPTICALLY PUMPED LASERS; PUMPING (LASER); QUANTUM WELL LASERS; SEMICONDUCTOR QUANTUM WIRES;

A1. CHARACTERIZATION; A1. INTERFACES; A3. METALORGANIC VAPOR PHASE EPITAXY; B1. NITRIDES; B2. SEMICONDUCTING III-V MATERIALS; B3. LASER DIODES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 53449089290     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.08.006     Document Type: Article

References (29)

1. Nakamura S., Senoh M., Nagahama S., Iwasa N., Yamada T., Matsushita T., Kiyoku H., and Sugimoto Y. Jpn. J. Appl. Phys. 35 (1996) L74
2. Nakamura S., Senoh M., Nagahama S., Iwasa N., Yamada T., Matsushita T., Kiyoku H., Sugimoto Y., Kozaki T., Umemoto H., Sano M., and Chocho K. Appl. Phys. Lett. 72 (1998) 2014
3. Nakamura S. Science 281 (1998) 956
4. Liu C.H., Su Y.K., Wen T.C., Chang S.J., and Chuang R.W. J. Crystal Growth 254 (2003) 336
5. Gurskii A.L., Pavlovskii V.N., Lutsenko E.V., Zubialevich V.Z., Yablonskii G.P., Kalisch H., Szymakowski A., Jansen R.H., Alam A., Schineller B., and Heuken M. J. Crystal Growth 275 (2005) e1047
6. Yablonskii G.P., Pavlovskii V.N., Lutsenko E.V., Zubialevich V.Z., Gurskii A.L., Kalisch H., Szymakowski A., Jansen R.H., Alam A., Schineller B., and Heuken M. Appl. Phys. Lett. 85 (2004) 5158
7. Schenk H.P.D., Mierry P.D., Laugt M., Omnes F., Leroux M., Beaumont B., and Gibart P. Appl. Phys. Lett. 75 (1999) 2587
8. Panish M.B., and Temkin H. Growth and Properties of Phosphorus Containing III-V Heterostructures vol. 26 (1993), Springer, Berlin, Heidelberg
9. Strite S., and Morkoc H. J. Vac. Sci. Technol. B 10 (1992) 1237
10. Bosi M., and Fornari R. J. Crystal Growth 265 (2004) 434
11. Kisielowski C., Liliental-Weber Z., and Nakamura S. Jpn. J. Appl. Phys. 36 (1997) 6932
12. Duxbury N., Bangert U., Dawson P., Thrush E.J., Stricht W.V.D., Jacobs K., and Moerman I. Appl. Phys. Lett. 76 (2000) 1600
13. Ranade M.R., Tessier F., Navrotsky A., and Marchand R. J. Mater. Res. 16 (2001) 2824
14. Mayrock O., Wünsche H.-J., and Henneberger F. Phys. Rev. B 62 (2000) 16870
15. Inahama S., Akiyama T., Nakamura K., and Ito T. e-J. Surf. Sci. Nanotech. 3 (2005) 503
16. Yoshimoto N., Matsuoka T., Sasaki T., and Katsui A. Appl. Phys. Lett. 59 (1991) 2251
17. Miller D.A.B., Chemla D.S., Damen T.C., Gossard A.C., Wiegmann W., Wood T.H., and Burrus C.A. Phys. Rev. Lett. 53 (1984) 2173
18. Chichibu S.F., Abare A.C., Minsky M.S., Keller S., Fleischer S.B., Bowers J.E., Hu E., Mishra U.K., Coldren L.A., DenBaars S.P., and Sota T. Appl. Phys. Lett. 73 (1998) 2006
19. Sonderegger S., Feltin E., Merano M., Crottini A., Carlin J.F., Sachot R., Deveaud B., Grandjean N., and Ganiere J.D. Appl. Phys. Lett. 89 (2006) 232109
20. Metzger T., Höpler R., Born E., Ambacher O., Stutzmann M., Stömmer R., Schuster M., Göbel H., Christiansen S., Albrecht M., and Strunk H.P. Philos. Mag. A 77 (1998) 1013
21. Burton W.K., Cabrera N., and Frank F.C. Philos. Trans. Roy. Soc. London-A 243 (1951) 299
22. Keller S., Mishra U.K., Denbaars S.P., and Seifert W. Jpn. J. Appl. Phys. 37 (1998) L431
23. Oliver R.A., Kappers M.J., Humphreys C.J., and Briggs G.A.D. J. Appl. Phys. 97 (2005) 013707
24. Sugahara T., Hao M., Wang T., Nakagawa D., Nao Y., Nishino K., and Sakai S. Jpn. J. Appl. Phys. 37 (1998) L1195
25. Wenzel H. Opt. Quantum Electron. 38 (2006) 953
26. Neugebauer J. Phys. Status Solidi (c) 90 (2003) 1651
27. Musikhin Yu.G., Gerthsen D., Bedarev D.A., Bert N.A., Lundin W.V., Tsatsul'nikov A.F., Sakharov A.V., Usikov A.S., Alferov Zh.I., Krestnikov I.L., Ledentsov N.N., Hoffmann A., and Bimberg D. Appl. Phys. Lett. 80 (2002) 2099
28. Lu D., Florescu D.I., Lee D.S., Ramer J.C., Parekh A., Merai V., Li S., Gardner J.J., Begarney M.J., and Armour E.A. Phys. Status Solidi (a) 202 (2005) 795
29. Hangleiter A., Hitzel F., Netzel C., Fuhrmann D., Rossow U., Ade G., and Hinze P. Phys. Rev. Lett. 95 (2005) 127402