Growth mode of InGaN on GaN (0001) in MOVPE

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages S565-S569

  Pristovsek, M ^a   Stellmach, J ^a   Leyer, M ^a   Kneissl, M ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; INDIUM; SEMICONDUCTOR ALLOYS;

CRITICAL THICKNESS; GROWTH MODES; GROWTH-MODE TRANSITION; HOMOGENEOUS LAYERS; IN-SITU ELLIPSOMETRY; RELAXED LAYERS; STRAINED LAYERS; STRANSKI-KRASTANOV GROWTH MODE;

III-V SEMICONDUCTORS;

EID: 79251635738     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880915     Document Type: Article

References (16)

1. I-hsiu Ho and G. B. Stringfellow, Appl. Phys. Lett. 69(18), 2701-2703 (1996).
2. S.Y. Karpov, MRS Internet J. Nitride Semicond. Res. 16, 1-5 (1998).
3. J. Z. Liu and A. Zunger, Phys. Rev. B 77(20), 205201 (2008).
4. T. M. Smeeton, M. J. Kappers, J. S. Barnard, M. E. Vickers, and C. J. Humphreys, Appl. Phys. Lett. 83(26), 5419-5421 (2003).
5. M. J. Galtrey, R. A. Oliver, M. J. Kappers, C. J. Humphreys, P. H. Clifton, D. Larson, D.W. Saxey, and A. Cerezo, J. Appl. Phys. 104(1), 013524 (2008).
6. M. Shimizu, Y. Kawaguchi, K. Hiramatsu, and N. Sawaki, Jpn. J. Appl. Phys. 36(6A), 3381-3384 (1997).
7. C. A. Parker, J. C. Roberts, S. M. Bedair, M. J. Reed, S. X. Liu, and N. A. El-Masry, Appl. Phys. Lett. 75, 2776-2778 (1999).
8. M. J. Reed, N. A. El-Masry, C. A. Parker, J. C. Roberts, and S. M. Bedair, Appl. Phys. Lett. 77, 4121-4123 (2000).
9. D. Holec, P. M. F. J. Costa, M. J. Kappers, and C. J. Humphreys, J. Cryst. Growth 303, 314-317 (2007).
10. S. M. de Sousa Pereira, K. P. O'Donnell, and E. J. da Costa Alves, Adv. Funct. Mater. 17(1), 37-42 (2007).
11. M. Leyer, J. Stellmach, C. Meissner, M. Pristovsek, and M. Kneissl, J. Cryst. Growth (2008) (in print).
12. C. Meissner, S. Ploch, M. Leyer, M. Pristovsek, and M. Kneissl, J. Cryst. Growth (2008) (in print).
13. N. Grandjean and J. Massies, Appl. Phys. Lett. 72(9), 1078-1080 (1998).
14. R. A. Oliver, M. J. Kappers, C. J. Humphreys, and G. A. D. Briggs, J. Appl. Phys. 97(1), 013707 (2005).
15. Y. Kangawa, T. Ito, Y. Kumagai, and A. Koukitu, Phys. Status Solidi C 0(7), 2575-2579 (2003).
16. F. Schulze, J. Bläsing, A. Dadgar, and A. Krost, Appl. Phys. Lett. 82(25), 4558-4560 (2003).