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Volumn 99, Issue 8, 2011, Pages

Misfit dislocation formation via pre-existing threading dislocation glide in (11 2 2) semipolar heteroepitaxy

(7) Hsu, Po Shan a Young, Erin C a Romanov, Alexey E a,b Fujito, Kenji c Denbaars, Steven P a Nakamura, Shuji a Speck, James S a

a UNIVERSITY OF CALIFORNIA (United States)

b IOFFE INSTITUTE (Russian Federation)

c MITSUBISHI CHEMICAL CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL THICKNESS; GAN SUBSTRATE; III-NITRIDE; INITIAL STAGES; INTERFACIAL MISFIT DISLOCATIONS; LATTICE-MISMATCHED; MECHANICAL STRESS; SEMIPOLAR; SLIP PLANE; THREADING DISLOCATION;

EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; STRESSES; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

HETEROJUNCTIONS;

EID: 80052412159 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3628459 Document Type: Article

Times cited : (55)

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