SCOPUS 정보 검색 플랫폼

Volumn 356, Issue 1, 2012, Pages 70-74

Topography of (202̄1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy

(8) Ploch, Simon a Wernicke, Tim a Thalmair, Johannes b Lohr, Matthias b Pristovsek, Markus a Zweck, Josef b Weyers, Markus c Kneissl, Michael a,c

a TECHNISCHE UNIVERSITÄT BERLIN (Germany)

b UNIVERSITY OF REGENSBURG (Germany)

c LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK (Germany)

Author keywords

A1. Crystal morphology; A3. Metal organic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting gallium compounds

Indexed keywords

ALGAN; ATOMIC SCALE; CRYSTAL MORPHOLOGIES; GAN LAYERS; GAN SUBSTRATE; GROWTH CONDITIONS; LOW GROWTH TEMPERATURE; METAL-ORGANIC VAPOR PHASE EPITAXY; MICROFACETS; PERIOD LENGTH; PHOTOLUMINESCENCE PROPERTIES; REACTOR PRESSURES;

EPITAXIAL GROWTH; GROWTH TEMPERATURE; METALLORGANIC VAPOR PHASE EPITAXY; SURFACE ROUGHNESS; VAPORS;

GALLIUM NITRIDE;

EID: 84864451391 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2012.07.016 Document Type: Article

Times cited : (32)

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