Engineering the electronic structure of epitaxial graphene by transfer doping and atomic intercalation

MRS Bulletin

Volumn 37, Issue 12, 2012, Pages 1177-1186

  Starke, U ^a   Forti, S ^a   Emtsev, K V ^a   Coletti, C ^b  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b ISTITUTO ITALIANO DI TECNOLOGIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON LAYERS; COVALENTLY BONDED; ELECTRONEGATIVE MOLECULES; EPITAXIAL GRAPHENE; GERMANIUM FILMS; GRAPHENE LAYERS; HYDROGEN ATOMS; INTERMEDIATE TEMPERATURES; MESOSCOPIC SCALE; N-DOPING; P-N JUNCTION; P-TYPE; TRANSFER-DOPING;

ELECTRONIC STRUCTURE; EPITAXIAL GROWTH; GERMANIUM; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE;

GRAPHENE;

EID: 84870007531     PISSN: 08837694     EISSN: None     Source Type: Journal    
DOI: 10.1557/mrs.2012.272     Document Type: Review

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