Electronic structures of an epitaxial graphene monolayer on SiC(0001) after gold intercalation: A first-principles study

Nanotechnology

Volumn 22, Issue 27, 2011, Pages

  Chuang, Feng Chuan ^a   Lin, Wen Huan ^a   Huang, Zhi Quan ^a   Hsu, Chia Hsiu ^a   Kuo, Chien Cheng ^a   Ozolins, Vidvuds ^b   Yeh, V ^c  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c NATIONAL DONG HWA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COHERENT INTERFACE; DIRAC POINT; ELECTRONIC DOPING; EPITAXIAL GRAPHENE; FIRST-PRINCIPLES CALCULATION; FIRST-PRINCIPLES STUDY; N-TYPE DOPING; P-TYPE DOPING;

CALCULATIONS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; MONOLAYERS; PHOTONIC BAND GAP; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

GRAPHENE;

EID: 79957816999     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/27/275704     Document Type: Article

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