Ferroelectric tunnel memristor

Nano Letters

Volumn 12, Issue 11, 2012, Pages 5697-5702

  Kim, D J ^a   Lu, H ^a   Ryu, S ^b   Bark, C W ^b   Eom, C B ^b   Tsymbal, E Y ^a   Gruverman, A ^a  

^a UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^b UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

Ferroelectric tunnel junction; memristor; polarization retention; resistive switching

Indexed keywords

APPLIED VOLTAGES; BISTABLES; CHARGE REDISTRIBUTION; CIRCUIT ELEMENTS; COMPUTATIONAL POWER; CONDUCTIVE FILAMENTS; CONVENTIONAL SYSTEMS; ELECTRONIC DEVICE; ELECTRONIC SYSTEMS; EXTERNAL VOLTAGES; FERROELECTRIC TUNNEL JUNCTIONS; FIELD-INDUCED; FUNCTIONAL PROPERTIES; INTERFACE BARRIER; MEMRISTIVE BEHAVIOR; MEMRISTOR; NON-VOLATILE; NON-VOLATILE MEMORIES; ORDERS OF MAGNITUDE; RESISTANCE RATIO; RESISTANCE STATE; RESISTIVE SWITCHING; ROOM TEMPERATURE; TRANSITION-METAL OXIDES; TUNNELING CONDUCTANCE;

ENERGY EFFICIENCY; FERROELECTRICITY; METALLIC COMPOUNDS; PASSIVE FILTERS; RESISTORS; SCANNING TUNNELING MICROSCOPY; SWITCHING SYSTEMS; TRANSITION METALS; TUNNEL JUNCTIONS;

MEMRISTORS;

EID: 84869179655     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl302912t     Document Type: Article

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