Magnetic tunnel junctions with ferroelectric barriers: Prediction of four resistance states from first principles

Nano Letters

Volumn 9, Issue 1, 2009, Pages 427-432

  Veev, Julian P ^a,b,c,d,e   Duan, Chun Gang ^a,b,c,d,e,f   Burton, J D ^a,b,c,d,e   Smogunov, Alexander ^a,b,c,d,e,g   Niranjan, Manish K ^a,b,c,d,e   Tosatti, Erio ^a,b,c,d,e,g   Jaswal, S S ^a,b,c,d,e   Tsymbal, Evgeny Y ^a,b,c,d,e  

^a UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^b UNIVERSITY OF PUERTO RICO   (Puerto Rico)

^c East China Normal University   (China)

^d ABDUS SALAM INTERNATIONAL CENTRE FOR THEORETICAL PHYSICS   (Italy)

^e DEMOCRITOS NATIONAL SIMULATION CENTER   (Italy)

^f EAST CHINA NORMAL UNIVERSITY   (China)

^g SISSA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ASYMMETRIC INTERFACES; ELECTRIC POLARIZATIONS; ELECTRORESISTANCE; FERROELECTRIC BARRIERS; FERROMAGNETIC ELECTRODES; FIRST PRINCIPLES; FIRST-PRINCIPLES CALCULATIONS; MAGNETIC RANDOM ACCESS MEMORIES; MAGNETIC TUNNEL JUNCTIONS; MULTIFERROIC; NANO-SCALE; POLARIZATION ORIENTATIONS; RESISTANCE STATE; SPINTRONIC DEVICES; STATE RESISTANCES; THIN INSULATING BARRIERS; THIN-FILM; TUNNELING MAGNETORESISTANCES;

ELECTRIC RESISTANCE; ELECTRODES; FERROELECTRIC MATERIALS; FERROELECTRICITY; MAGNETIC FIELD EFFECTS; MAGNETIC STORAGE; MAGNETORESISTANCE; MAGNETS; POLARIZATION; RANDOM ACCESS STORAGE; SEMICONDUCTOR JUNCTIONS; TUNNELS; WAVEGUIDE JUNCTIONS;

TUNNEL JUNCTIONS;

METAL; NANOMATERIAL;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; COMPUTER SIMULATION; IMPEDANCE; MAGNETISM; METHODOLOGY; MICROELECTRODE; NANOTECHNOLOGY; PARTICLE SIZE; ULTRASTRUCTURE;

COMPUTER SIMULATION; ELECTRIC IMPEDANCE; MAGNETICS; METALS; MICROELECTRODES; MODELS, CHEMICAL; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE;

EID: 61649117825     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl803318d     Document Type: Article

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