Room-temperature ferroelectric resistive switching in ultrathin Pb(Zr 0.2Ti0.8)O3 films

ACS Nano

Volumn 5, Issue 7, 2011, Pages 6032-6038

  Pantel, Daniel ^a   Goetze, Silvana ^a   Hesse, Dietrich ^a   Alexe, Marin ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

conductive AFM; ferroelectrics; nanoscale capacitor; Pb(Zr0.2Ti0.8)O3; PFM; resistive switching

Indexed keywords

BINARY INFORMATION; CONDUCTIVE-AFM; DATA STORAGE APPLICATIONS; EPITAXIAL FERROELECTRIC; FERROELECTRIC LAYERS; FERROELECTRIC POLARIZATION; FORCE MICROSCOPY; GIANT ELECTRORESISTANCES; NANOSCALE CAPACITORS; NON DESTRUCTIVE; PFM; PIEZOELECTRIC FORCE MICROSCOPY; RESISTANCE RATIO; RESISTANCE STATE; RESISTIVE SWITCHING; ROOM TEMPERATURE; SELF-ASSEMBLY METHOD; SPONTANEOUS POLARIZATIONS; SWITCHING CURRENT DENSITY; ULTRA-THIN;

CAPACITORS; CONDUCTIVE MATERIALS; FERROELECTRIC FILMS; FERROELECTRICITY; LEAD; MANGANESE OXIDE; METALS; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; POLARIZATION; SWITCHING; SWITCHING SYSTEMS; ZIRCONIUM;

FERROELECTRIC MATERIALS;

EID: 79961054109     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn2018528     Document Type: Conference Paper

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