Enhancement of ferroelectric polarization stability by interface engineering

Advanced Materials

Volumn 24, Issue 9, 2012, Pages 1209-1216

  Lu, H ^a   Liu, X ^a   Burton, J D ^a   Bark, C W ^b   Wang, Y ^a   Zhang, Y ^c   Kim, D J ^a   Stamm, A ^a   Lukashev, P ^a   Felker, D A ^b   Folkman, C M ^b   Gao, P ^c   Rzchowski, M S ^b   Pan, X Q ^c   Eom, C B ^b   Tsymbal, E Y ^a   Gruverman, A ^a  

^a UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^b University of Wisconsin Madison   (United States)

^c UNIVERSITY OF MICHIGAN   (United States)

Author keywords

ferroelectrics; heterostructures; interface engineering; Polarization; thin films

Indexed keywords

FERROELECTRIC POLARIZATION; FIRST PRINCIPLE CALCULATIONS; INTERFACE ENGINEERING; POLARIZATION STATE; THEORETICAL PREDICTION;

FERROELECTRIC MATERIALS; FERROELECTRICITY; HETEROJUNCTIONS; POLARIZATION; THIN FILMS;

INTERFACE STATES;

BARIUM; BARIUM DERIVATIVE; BARIUM OXIDE; NANOMATERIAL; OXIDE; RUTHENIUM DERIVATIVE; RUTHENIUM DIOXIDE; STRONTIUM;

ARTICLE; CHEMISTRY; ELECTRICITY; ELECTRONICS; INSTRUMENTATION; SURFACE PROPERTY;

BARIUM; BARIUM COMPOUNDS; ELECTRICITY; ELECTRONICS; NANOSTRUCTURES; OXIDES; RUTHENIUM COMPOUNDS; STRONTIUM; SURFACE PROPERTIES;

EID: 84863115905     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201104398     Document Type: Article

References (35)

1. J. F. Scott, Ferroelectric Memories, Springer, Germany 2000.
2. T. M. Shaw, S. Trolier-McKinstry, P. C. McIntyre, Ann. Rev. Mater. Sci. 2000, 30, 263.
3. C. H. Ahn, K. M. Rabe, J.-M. Triscone, Science 2004, 303, 488.
4. E. Y. Tsymbal, H. Kohlstedt, Science 2006, 313, 181.
5. M. Y. Zhuravlev, R. F. Sabirianov, S. S. Jaswal, E. Y. Tsymbal, Phys. Rev. Lett. 2005, 94, 246802.
6. Kohlstedt, N. A. Pertsev, J. Rodríguez Contreras, R. Waser, Phys. Rev. B 2005, 72, 125341.
7. V. Garcia, S. Fusil, K. Bouzehouane, S. Enouz-Vedrenne, N. D. Mathur, A. Barthelemy, M. Bibes, Nature 2009, 460, 81.
8. A. Gruverman, D. Wu, H. Lu, Y. Wang, H. W. Jang, C. M. Folkman, M. Y. Zhuravlev, D. Felker, M. Rzchowski, C.-B. Eom, E. Y. Tsymbal, Nano Lett. 2009, 9, 3539.
9. M. Y. Zhuravlev, S. S. Jaswal, E. Y. Tsymbal, R. F. Sabirianov, Appl. Phys. Lett. 2005, 87, 222114.
10. J. P. Velev, C.-G. Duan, J. D. Burton, A. Smogunov, M. K. Niranjan, E. Tosatti, S. S. Jaswal, E. Y. Tsymbal, Nano Lett. 2009, 9, 427.
11. V. Garcia, M. Bibes, L. Bocher, S. Valencia, F. Kronast, A. Crassous, X. Moya, S. Enouz-Vedrenne, A. Gloter, D. Imhoff, C. Deranlot, N. D. Mathur, S. Fusil, K. Bouzehouane, A. Barthelemy, Science 2010, 327, 1106.
12. J. Junquera, Ph. Ghosez, Nature 2003, 422, 506.
13. C. Lichtensteiger, J. M. Triscone, J. Junquera, Ph. Ghosez, Phys. Rev. Lett. 2005, 94, 047603.
14. D. D. Fong, A. M. Kolpak, J. A. Eastman, S. K. Streiffer, P. H. Fuoss, G. B. Stephenson, C. Thompson, D. M. Kim, K. J. Choi, C. B. Eom, I. Grinberg, A. M. Rappe, Phys. Rev. Lett. 2006, 96, 127601.
15. S. K. Streiffer, J. A. Eastman, D. D. Fong, C. Thompson, A. Munkholm, M. V. Ramana, Murty, O. Auciello, G. R. Bai, G. B. Stephenson, Phys. Rev. Lett. 2002, 89, 067601.
16. D. D. Fong, G. B. Stephenson, S. K. Streiffer, J. A. Eastman, O. Auciello, P. H. Fuoss, C. Thompson, Science 2004, 304, 1650.
17. B.-K. Lai, I. Ponomareva, I. I. Naumov, I. Kornev, H. Fu, L. Bellaiche, G. J. Salamo, Phys. Rev. Lett. 2006, 96, 137602.
18. P. Aguado-Puente, J. Junquera, Phys. Rev. Lett. 2008, 100, 177601.
19. V. Nagarajan, J. Junquera, J. Q. He, C. L. Jia, R. Waser, K. Lee, Y. K. Kim, S. Baik, T. Zhao, R. Ramesh, Ph. Ghosez, K. M. Rabe, J. Appl. Phys. 2006, 100, 051609.
20. S. V. Kalinin, D. A. Bonnell, Phys. Rev. B 2001, 63, 125411.
21. D. J. Kim, J. Y. Jo, Y. S. Kim, Y. J. Chang, J. S. Lee, Jong-Gul Yoon, T. K. Song, T. W. Noh, Phys. Rev. Lett. 2005, 95, 237602.
22. A. K. Tagantsev, G. Gerra, J. Appl. Phys. 2006, 100, 051607.
23. C. G. Duan, R. F. Sabirianov, W. N. Mei, S. S. Jaswal, E. Y. Tsymbal, Nano Lett. 2006, 6, 483.
24. M. Stengel, D. Vanderbilt, N. A. Spaldin, Nat. Mat. 2009, 8, 392.
25. G. Gerra, A. K. Tagantsev, N. Setter, Phys. Rev. Lett. 2007, 98, 207601.
26. C.-Q. Jin, J.-S. Zhou, J. B. Goodenough, Q. Q. Liu, J. G. Zhao, L. X. Yang, Y. Yu, R. C. Yu, T. Katsura, A. Shatskiy, E. Ito, Proc. Natl. Acad. Sci. USA 2008, 105, 7115.
27. H. J. Chang, S. V. Kalinin, A. N. Morozovska, M. Huijben, Y.-H. Chu, P. Yu, R. Ramesh, E. A. Eliseev, G. S. Svechnikov, S. J. Pennycook, A. Y. Borisevich, Adv. Mat. 2011, 23, 2474.
28. R. Kretschmer, K. Binder, Phys. Rev. B 1979, 20, 1065.
29. X. Liu, Y. Wang, P. V. Lukashev, J. D. Burton, E. Y. Tsymbal, The interface dipole effect on thin-film ferroelectric stability: First-principles and phenomenological modeling, submitted.
30. K. J. Choi, M. Biegalski, Y. L. Li, A. Sharan, J. Schubert, R. Uecker, P. Reiche, Y. B. Chen, X. Q. Pan, V. Gopalan, L.-Q. Chen, D. G. Schlom, C. B. Eom, Science 2004, 306, 1005.
31. C. B. Eom, R. J. Cava, R. M. Fleming, J. M. Phillips, R. B. van Dover, J. H. Marshall, J. W. P. Hsu, J. J. Krajewski, W. F. Peck Jr., Science 1992, 258, 1766.
32. D. H. Chang, Y. S. Yoon, S. J. Kang, J. Korean Phys. Soc. 2001, 38, 277.
33. A. F. Devonshire, Philos. Mag. 1951, 42, 1065.
34. S. V. Kalinin, B. J. Rodriguez, S.-H. Kim, S.-K. Hong, A. Gruverman, E. A. Eliseev, Appl. Phys. Lett. 2008, 92, 152906.
35. D. A. Tenne, P. Turner, J. D. Schmidt, M. Biegalski, Y. L. Li, L. Q. Chen, A. Soukiassian, S. Trolier-McKinstry, D. G. Schlom, X. X. Xi, D. D. Fong, P. H. Fuoss, J. A. Eastman, G. B. Stephenson, C. Thompson, S. K. Streiffer, Phys. Rev Lett. 2009, 103, 177601.